LS5905 Datasheet PDF - Linear Integrated Systems

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LS5905
Linear Integrated Systems

Part Number LS5905
Description LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Page 2 Pages


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Linear Integrated Systems
LS5905 LS5906 LS5907
LS5908 LS5909
LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
FEATURES
LOW DRIFT
ULTRA LOW LEAKAGE
LOW PINCHOFF
|VGS1-2 /T|= 5µV/°C max.
IG = 150fA TYP.
VP= 2V TYP.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65° to +150°C
+150°C
S1 G2
G1 3
5 S2
Maximum Voltage and Current for Each Transistor NOTE 1
-VGSS
Gate Voltage to Drain or Source 40V
-VDSO
-IG(f)
-IG
Drain to Source Voltage
Gate Forward Current
Gate Reverse Current
40V
10mA
10µA
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
40mW @ +125°C
D1
D2
G1 S2
22 X 20 MILS
D1 2
1
S1
6 D2
7
G2
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS LS5906 LS5907 LS5908 LS5909 LS5905
|VGS1-2 /T| max. Drift vs. Temperature
5
10 20 40 40
|VGS1-2| max.
-IGmax.
-IGmax.
-IGSSmax.
-IGSSmax.
Offset Voltage
Operating
High Temperature
At Full Conduction
High Temperature
5 5 10 15 15
1 1 1 13
1 1 1 13
2 2 2 25
5 5 5 5 10
UNITS CONDITIONS
µV/°C
mV
pA
VDG= 10V, ID= 30µA
TA=-55°C to +125°C
VDG=10V ID= 30µA
nA TA= +125°C
pA VDS= 0V VGS= 20V
nA TA= +125°C
SYMBOL
BVGSS
BVGGO
Yfss
Yfs
|Yfs1-2/Yfs|
IDSS
|IDSS1-2/IDSS|
VGS(off) or VP
VGS
IGGO
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
Mismatch
DRAIN CURRENT
Full Conduction
Mismatch at Full Conduction
GATE VOLTAGE
Pinchoff Voltage
Operating Range
GATE CURRENT
Gate-to-Gate Leakage
MIN.
40
40
TYP.
60
--
70 300
50 100
-- 1
60 400
-- 2
0.6 2
-- --
-- 1
MAX.
--
--
UNITS
V
V
CONDITIONS
VDS= 0
IG= 1nA
ID= 1nA
ID= 0
IS= 0
500
µmho VDG= 10V VGS= 0
f= 1kHz
200 µmho VDG= 10V ID= 30µA f= 1kHz
5%
1000
5
4.5
4
--
µA
%
V
V
pA
VDG= 10V VGS= 0
VDS= 10V
VDS= 10V
VGG=20V
ID= 1nA
ID= 30µA
Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261



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SYMBOL
YOSS
YOS
|YOS1-2|
CMR
CMR
NF
en
CISS
CRSS
CDD
CHARACTERISTICS
OUTPUT CONDUCTANCE
Full Conduction
Operating
Differential
COMMON MODE REJECTION
-20 log |VGS1-2/VDS|
-20 log |VGS1-2/VDS|
NOISE
Figure
Voltage
CAPACITANCE
Input
Reverse Transfer
Drain-to-Drain
MIN.
--
--
--
--
--
--
--
--
--
--
TYP.
--
0.1
0.01
MAX. UNITS CONDITIONS
5 µmho
0.1 µmho
0.1 µmho
VDG= 10V
VDG= 10V
VGS= 0
ID= 30µA
90
-- dB
VDS= 10 to 20V
90
-- dB
VDS= 5 to 10V
ID= 30µA
ID= 30µA
--
1 dB
VDS= 10V
VGS= 0 RG= 10M
f= 100Hz
NBW= 6Hz
20
70 nV/Hz VDG= 10V
ID= 30µA f= 10Hz
NBW= 1Hz
--
3 pF
VDS= 10V
VGS= 0 f= 1MHz
--
1.5 pF
VDS= 10V
VGS= 0 f= 1MHz
--
0.1 pF
VDG= 20V
ID= 30µA
TO-71
Six Lead
0.195 DIA.
0.175
0.030
MAX.
0.230 DIA.
0.209
0.150
0.115
6 LEADS
0.019 DIA.
0.016
0.500 MIN.
0.100
0.050
234
15
86
45° 7
0.046
0.036
0.048
0.028
TO-78
0.016
0.019
DIM. A
0.335
0.370
0.305
0.335
MAX.
0.040 0.165
0.185
MIN. 0.500
0.016
0.021
DIM. B
0.029
0.045
0.200
SEATING
PLANE
0.100
2 34
15
8 76
0.100
45°
0.028
0.034
P-DIP
0.320 (8.13)
0.290 (7.37)
0.405
(10.29)
MAX.
S1 1
D1 2
SS 3
G1 4
8 G2
7 SS
6 D2
5 S2
SOIC
0.150 (3.81)
0.158 (4.01)
0.188 (4.78)
0.197 (5.00)
S1 1
D1 2
SS 3
G1 4
8 G2
7 SS
6 D2
5 S2
0.228 (5.79)
0.244 (6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261



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