LE2416RDXA Datasheet PDF - ON Semiconductor

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LE2416RDXA
ON Semiconductor

Part Number LE2416RDXA
Description EEPROM
Page 17 Pages


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LE2416RDXA
16 kb I2C CMOS Serial EEPROM
Overview
The LE2416RDXA is two-wire serial interface EEPROM (Electrically
Erasable and Programmable ROM). This device realizes high speed and a
high level reliability by high performance CMOS EEPROM technology.
This device is compatible with I2C memory protocol, therefore it is best
suited for application that requires re-writable nonvolatile parameter
memory.
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Function
 Capacity : 16k bits (2k 8 bits)
Single supply voltage : 1.7 V to 3.6 V
Operating temperature : 40 ºC to +85 ºC
WLCSP6, 0.80x1.20
Interface : Two wire serial interface (I2C Bus*)
 Operating clock frequency : 400 kHz (Fast), 1000 kHz (Fast-Plus)
Low Power consumption
: Standby : 2 µA (max.)
: Active (Read, 400 kHz) : 0.5 mA (max.)
Active (Read, 1000 kHz) : 2.0 mA (max.)
Automatic page write mode : 16 Bytes
Read mode : Sequential Read and random read
Erase/Write cycles : 106 cycles (Page Write)
Data Retention : 20 years
Pull-up resistance: 5 k(typ.) on WP pin with a built-in pull-up resister
High reliability : Adopts proprietary symmetric memory array configuration (USP6947325)
Hardware write protect feature
Noise filters connected to SCL and SDA pins
Incorporates a feature to prohibit write operations under low voltage conditions.
Package : LE2416RDXA WLP6(0.801.20) 0.33 mm height
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Supply voltage
Symbol
DC input voltage
Over-shoot voltage
Storage temperature
Tstg
Conditions
Ratings
0.5 to +4.6
0.5 to VDD+0.5
1.0 to VDD+1.0
65 to +150
Unit
V
V
V
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
* This product is licensed from Silicon Storage Technology, Inc. (USA).
ORDERING INFORMATION
See detailed ordering and shipping information on page 17 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
August 2016 - Rev. 1
1
Publication Order Number :
LE2416RDXA/D



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Recommended Operating Conditions
Parameter
Operating supply voltage
Operating temperature
Symbol
LE2416RDXA
Conditions
min
1.7
40
Ratings
typ
max
3.6
+85
Unit
V
C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended
Operating Ranges limits may affect device reliability.
DC Electrical Characteristics
Parameter
Symbol
Supply current at reading
Supply current at writing
Standby current
Input leakage current
Output leakage current
Input Low voltage
Input High voltage
Output Low voltage
ICC1
ICC2
ISB
ILI
ILO
VIL
VIH
VOL2
VOL1
Conditions
f = 400 kHz, VDD = VDD Max
f = 1000 kHz, VDD = VDD Max
f = 1000 kHz / 400 kHz,
tWC = 5 ms, VDD = VDD Max
WP = VDD2 = VDD
VIN = VDD or VSS
VIN = VSS to VDD, VDD = VDD Max
VIN = VSS to VDD, VDD = VDD Max
IOL = 1.0 mA, VDD = 1.7 V
IOL = 1.2 mA, VDD = 2.0 V
IOL = 2.1 mA, VDD = 2.0 V
IOL = 3.0 mA, VDD = 2.5 V
Spec.
min typ
2.0
2.0
VDD 0.7
max
0.5
2.0
3.0
2
Unit
mA
mA
µA
+2.0
+2.0
VDD 0.3
µA
µA
V
V
0.2 V
0.4 V
Capacitance at Ta = 25C, f = 1 MHz
Parameter
Symbol
Conditions
max Unit
In/Output pin capacitance
CI/O
VI/O = 0 V (SDA)
10 pF
Input pin capacitance
CI
VIN = 0 V
10 pF
Note : These parameter values do not represent the results of measurements undertaken for all devices but rather values for some of the sampled devices.
Pull-up resistance (WP) at Ta = 40 to 85C
Parameter
Symbol
Conditions
min typ max Unit
Pull up resistance
R Resistance between WP to VDD2
3500
5000
6500
Note : These parameter values do not represent the results of measurements undertaken for all devices but rather values for some of the sampled devices.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
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Fast-Plus (1000 kHz)
Parameter
Slave mode SCL clock frequency
SCL clock low time
SCL clock high time
SDA output delay time
SDA data output hold time
Start condition setup time
Start condition hold time
Data in setup time
Data in hold time
Stop condition setup time
SCL SDA rise time
SCL SDA fall time
Bus release time
Noise suppression time
Write time
Fast (400 kHz)
Parameter
Slave mode SCL clock frequency
SCL clock low time
SCL clock high time
SDA output delay time
SDA data output hold time
Start condition setup time
Start condition hold time
Data in setup time
Data in hold time
Stop condition setup time
SCL SDA rise time
SCL SDA fall time
Bus release time
Noise suppression time
Write time
LE2416RDXA
Symbol
fSCLS
tLOW
tHIGH
tAA
tDH
tSU.STA
tHD.STA
tSU.DAT
tHD.DAT
tSU.STO
tR
tF
tBUF
tSP
tWC
min
0
500
300
50
50
250
250
50
0
250
Spec.
typ
500
max
1000
450
120
120
50
5
Unit
kHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
Symbol
fSCLS
tLOW
tHIGH
tAA
tDH
tSU.STA
tHD.STA
tSU.DAT
tHD.DAT
tSU.STO
tR
tF
tBUF
tSP
tWC
min
0
1200
600
100
100
600
600
100
0
600
Spec.
typ
1200
max
400
900
300
300
50
5
Unit
kHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
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Standard (100 kHz)
Parameter
Slave mode SCL clock frequency
SCL clock low time
SCL clock high time
SDA output delay time
SDA data output hold time
Start condition setup time
Start condition hold time
Data in setup time
Data in hold time
Stop condition setup time
SCL SDA rise time
SCL SDA fall time
Bus release time
Noise suppression time
Write time
LE2416RDXA
Symbol
fSCLS
tLOW
tHIGH
tAA
tDH
tSU.STA
tHD.STA
tSU.DAT
tHD.DAT
tSU.STO
tR
tF
tBUF
tSP
tWC
min
0
4700
4000
100
100
4700
4000
250
0
4000
Spec.
typ
4700
max
100
3500
1000
300
50
5
Unit
kHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
AC measurement condition
Input pulse level
Input pulse rise / fall time
0.2 VDD to 0.8 VDD
20 ns
Output timing reference level
Output load
0.5 VDD
100 pF
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