L14N1 Datasheet PDF - Fairchild Semiconductor


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L14N1
Fairchild Semiconductor

Part Number L14N1
Description HERMETIC SILICON PHOTOTRANSISTOR
Page 4 Pages

L14N1 datasheet pdf
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HERMETIC SILICON PHOTOTRANSISTOR
PACKAGE DIMENSIONS
0.195 (4.96)
0.178 (4.52)
0.230 (5.84)
0.209 (5.31)
0.030 (0.76)
MAX
0.210 (5.34)
MAX
0.500 (12.7)
MIN
0.100 (2.54) DIA.
0.100 (2.54)
0.050 (1.27)
2
0.038 (.97) NOM
0.046 (1.16)
0.036 (0.92)
13
45°
Ø0.021 (0.53) 3X
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
L14N1 L14N2
SCHEMATIC
(CONNECTED TO CASE)
COLLECTOR
3
BASE 2
1
EMITTER
DESCRIPTION
The L14N1/L14N2 are silicon phototransistors mounted in a wide angle, TO-18 package.
FEATURES
• Hermetically sealed package
• Wide reception angle
• Device can be used as a photodiode by using the collector and base leads.
2001 Fairchild Semiconductor Corporation
DS300308 6/01/01
1 OF 4
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HERMETIC SILICON PHOTOTRANSISTOR
L14N1 L14N2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(3,4,5 and 6)
Soldering Temperature (Flow)(3,4 and 6)
Collector to Emitter Breakdown Voltage
Collector to Base Breakdown Voltage
Emitter to Base Breakdwon Voltage
Power Dissipation (TA = 25°C)(1)
Power Dissipation (TC = 25°C)(2)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
VCEO
VCBO
VEBO
PD
PD
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
30
40
5
300
600
Unit
°C
°C
°C
°C
V
V
V
mW
mW
NOTE:
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm2 is approximately
equivalent to a tungsten source, at 2870°K, of 10 mW/cm2.
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
PARAMETER
Collector-Emitter Breakdown
Emitter-Base Breakdown
Collector-Base Breakdown
Collector-Emitter Leakage
Collector-Base leakage
Reception Angle at 1/2 Sensitivity
On-State Collector Current L14N1
On-State Collector Current L14N2
On-State Photodiode Current
Rise Time
Fall Time
Saturation Voltage L14N1
Saturation Voltage L14N2
TEST CONDITIONS
SYMBOL MIN
TYP
MAX
UNITS
IC = 10 mA, Ee = 0
IE = 100 µA, Ee = 0
IC = 100 µA, Ee = 0
VCE = 10 V, Ee = 0
VCB = 25 V, Ee = 0
Ee = 0.5 mW/cm2, VCE = 5 V(7,8)
Ee = 0.5 mW/cm2, VCE = 5 V(7,8)
Ee = 1.5 mW/cm2, VCB = 5 V(7,8)
IC = 10 mA, VCC = 5 V, RL =100
IC = 10 mA, VCC = 5 V, RL =100
IC = 0.8 mA, Ee = 3.0 mW/cm2(7,8)
IC = 1.6 mA, Ee = 3.0 mW/cm2(7,8)
BVCEO
BVEBO
BVCBO
ICEO
ICBO
θ
IC(ON)
IC(ON)
ICB(ON)
tr
tf
VCE(SAT)
VCE(SAT)
30
5
40
1.0
2.0
—V
—V
—V
100 nA
25 nA
±40 Degrees
— mA
mA
5.0 µA
14 µs
16 µs
0.40 V
0.40 V
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6/01/01 DS300308



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HERMETIC SILICON PHOTOTRANSISTOR
Figure 1. Light Current vs. Collector to Emitter Voltage
10
8
6
NORMALIZED TO:
4 Ee = 5 mW/cm2
Ee = 20 mW/cm2
VCE = 5 V
2 TA = 25°C
Ee = 10 mW/cm2
PULSED
1 tp = 300 µsec
Ee = 5 mW/cm2
.8
.6 Ee = 2 mW/cm2
.4
Ee = 1 mW/cm2
.2
.1 Ee = 0.5 mW/cm2
.08
.06
.04 Ee = 0.2 mW/cm2
.02 Ee = 0.1 mW/cm2
.01
.01 .02 .04 .06 .08 .1 .2 .4 .6 .8 1 2 4 6 8 10 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. Dark Current vs. Temperature
105
104
103
102
10
NORMALIZED TO:
1
TA = 25°C
VCE = 10 V
0.1
0
10 20 30 40 50
60 70 80 90 100
TA, TEMPERATURE (°C)
L14N1 L14N2
Figure 2. Normalized Light Current vs. Radiation
4
2
1
8
6
4
2
1
.08
.06
.04
.02
.01
.1 .2 .4 .6 .8 1
NORMALIZED TO:
Ee = 5 mW/cm2
VCE = 5 V
TA = 25°C
PULSED
tp = 300 µsec
2 4 6 8 10
20
Ee - TOTAL IRRADIANCE IN mW/cm2
Figure 4. Light Current vs. Temperature
4 IF = 50 mA
IF = 20 mA
IF = 10 mA
2
1
.8
.6 IF = 5 mA
.4
.2
IF = 2 mA
IF = 1 mA
.1
.08
.06 NORMALIZED TO: IF = 5 mA
.04 VCE = 5 V
TA = 25°C
.02 PULSED
GAAS SOURCE (1N6265)
.01 TJ = TA, tp = 300 µsec
-50 -26
0
IF = 0.5 mA
26 50
TA, TEMPERATURE (°C)
75 100
Figure 5. Angular and Spectral Response
100
1
80 0.8
60 0.6
40 0.4
20
0
-40 -20 0
20 40 500
θ, ANGULAR DISPLACEMENT
FROM OPTICAL AXIS
(DEGREES)
0.2
700 900
λ, WAVE LENGTH
(NANOMETERS)
0
1100
DS300308 6/01/01
Figure 6. Switching Speed vs. Bias
100
80
60
40
RL = 1000
20 RL = 500
RL = 250
10
8
6
RL = 1000
RL = 500
RL = 250
4
2 RL = 100
RL = 100
1
.8
.6 NORMALIZED TO:
.4 VCC = 5 V
IC = 10 mA
.2 RL = 100
TA = 25°C
.1
.1 .2 .4 .6 .8 1
RISE TIME
RL = 50
NORMALIZED TO:
VCC = 5 V
IC = 10 mA
RL = 100
TA = 25°C
RL = 50
2 4 8 10 .1 .2 .4 .6 .8 1 2 4 6 8 10
ICE, OUTPUT CURRENT (mA)
FALL TIME
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HERMETIC SILICON PHOTOTRANSISTOR
L14N1 L14N2
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
DS300308 6/01/01
4 OF 4
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