L042 Datasheet PDF - IXYS Corporation

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L042
IXYS Corporation

Part Number L042
Description Half Controlled Single Phase Rectifier Bridge
Page 3 Pages


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Half Controlled
Single Phase Rectifier Bridge
with Freewheeling Diode
VHF 36
IdAVM = 40 A
VRRM = 800-1600 V
VRSM
VDSM
V
900
1300
1500
1700
VRRM
VDRM
V
800
1200
1400
1600
Type
VHF 36-08io5
VHF 36-12io5
VHF 36-14io5
VHF 36-16io5
13
2
6
4
8
1 23
6
4
8
Symbol
IdAV
IdAVM x
IFRMS, ITRMS
IFSM, ITSM
I2t
(di/dt)cr
(dv/dt)
cr
VRGM
PGM
PGAVM
T
VJ
TVJM
T
stg
VISOL
Md
Weight
Test Conditions
Maximum Ratings
TK = 85°C, module
module
per leg
36
40
28
TVJ = 45°C;
V =0V
R
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = TVJM
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
=
45°C
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = TVJM
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 125°C
f =50 Hz, tP =200 ms
VD = 2/3 VDRM
IG = 0.3 A,
diG/dt = 0.3 A/ms
repetitive, IT = 50 A
non repetitive, IT = 1/2 • IdAV
T = T ; V = 2/3 V
VJ
VJM
DR
DRM
RGK = ¥; method 1 (linear voltage rise)
320
350
280
310
500
520
390
400
150
500
1000
10
TVJ = TVJM
IT = ITAVM
tp = 30 ms
tp = 500 ms
tp = 10 ms
£ 10
£5
£1
0.5
-40...+125
125
-40...+125
50/60 Hz, RMS
IISOL £ 1 mA
Mounting torque
t = 1 min
t=1s
(M5)
(10-32 UNF)
3000
3600
2-2.5
18-22
50
A
A
A
A
A
A
A
A2s
A2s
A2s
A2s
A/ms
A/ms
V/ms
V
W
W
W
W
°C
°C
°C
V~
V~
Nm
lb.in.
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
x for resistive load
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
Features
q Package with DCB ceramic base plate
q Isolation voltage 3600 V~
q Planar passivated chips
q ¼" fast-on terminals
q UL registered E 72873
Applications
q Supply for DC power equipment
q DC motor control
Advantages
q Easy to mount with two screws
q Space and weight savings
q Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
1-3



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VHF 36
Symbol
I ,I
RD
V ,V
TF
VT0
rT
VGT
I
GT
VGD
IGD
IL
IH
t
gd
tq
Qr
RthJC
RthJK
dS
dA
a
Test Conditions
Characteristic Values
V =V ;V =V
R RRM D DRM
T =T
VJ VJM
TVJ = 25°C
I,
T
I
F
=
45
A;
T
VJ
=
25°C
For power-loss calculations only (TVJ = 125°C)
£ 5 mA
£ 0.3 mA
£ 1.45 V
0.85 V
13 mW
VD = 6 V;
V = 6 V;
D
TVJ = 25°C
TVJ = -40°C
T
VJ
=
25°C
TVJ = -40°C
T
VJ
=
125°C
TVJ = TVJM;
TVJ = TVJM;
VD = 2/3 VDRM
VD = 2/3 VDRM
IG = 0.3 A; tG = 30 ms; TVJ = 25°C
diG/dt = 0.3 A/ms;
TVJ = -40°C
TVJ = 125°C
TVJ = 25°C; VD = 6 V; RGK = ¥
T
VJ
=
25°C;
V
D
=
1/2
V
DRM
IG = 0.3 A; diG/dt = 0.3 A/ms
TVJ = 125°C, IT = 15 A, tP = 300 ms, VR = 100 V
di/dt = -10 A/ms, dv/dt = 20 V/ms, VD = 2/3 VDRM
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
£ 1.0 V
£ 1.2 V
£ 65 mA
£ 80 mA
£ 50 mA
£ 0.2 V
£ 5 mA
£ 150 mA
£ 200 mA
£ 100 mA
£ 100 mA
£ 2 ms
typ. 150 ms
75 mC
1.15 K/W
0.29 K/W
1.55 K/W
0.39 K/W
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
12.6 mm
6.3 mm
50 m/s2
10
V
VG
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
3
2
1
1
6
5
4
4: PGAV = 0.5 W
IGD, TVJ = 125°C
0.1
5: PGM = 1 W
6: PGM = 10 W
1 10 100 1000 mA
IG
Fig. 1 Gate trigger range
1000
µs
tgd
100
TVJ = 25°C
typ. Limit
10
1
10 100 mA 1000
IG
Fig. 2 Gate controlled delay time tgd
© 2000 IXYS All rights reserved
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VHF 36
70
A
60
IF 50
40
30
20
10
typ.
TVJ = 125°C
TVJ = 25°C
max.
300
A 50Hz, 80% VRRM
250
IFSM
200
TVJ = 45°C
150
100
TVJ = 125°C
50
0
0.0 0.5 1.0 1.5 V 2.0
VF
Fig. 3 Forward current versus voltage
drop per diode
120
W
100
Ptot
80
60
40
0
0.001
0.01
0.1 s
t
Fig. 4 Surge overload current
1
RthHA :
0.5 K/W
1.0 K/W
1.5 K/W
2.0 K/W
3.0 K/W
4.0 K/W
6.0 K/W
20
103
A2s VR = 0 V
I2t
TVJ = 45°C
TVJ = 125°C
102
101
1
2 3 4 5 6 7 8ms910
t
Fig. 5 I2t versus time per diode
50
A
40
Id(AV)M
30
20
10
0
0 10 20 30 40 A 0 20 40 60 80 100 120 °1C40
IF(AV)M
Tamb
Fig. 6 Power dissipation versus direct output current and ambient temperature
2.0
0
0 20 40 60 80 100 120 °C
TH
Fig. 7 Max. forward current versus
heatsink temperature
K/W
1.5
ZthJH
1.0 Constants for Z calculation:
thJH
i
0.5 1
2
3
4
0.0
0.001
0.01
0.1
1 s 10
Fig. 8 Transient thermal impedance junction to heatsink
t
R (K/W)
thi
0.005
0.2
0.875
0.47
t (s)
i
0.008
0.05
0.06
0.25
© 2000 IXYS All rights reserved
3-3



L042 datasheet pdf
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L042 pdf
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