KF3N60D Datasheet PDF - KEC


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KF3N60D
KEC

Part Number KF3N60D
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Page 6 Pages

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SEMICONDUCTOR
TECHNICAL DATA
KF3N60D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS= 600V, ID= 2.3A
Drain-Source ON Resistance : RDS(ON)=3.3
Qg(typ) = 8.5nC
@VGS = 10V
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
KF3N60D
A
CD
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
123
1. GATE
2. DRAIN
3. SOURCE
Drain-Source Voltage
VDSS
600
Gate-Source Voltage
VGSS
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
2.3
1.46
7*
120
3.2
4.5
Drain Power
Dissipation
Tc=25
Derate above 25
PD
73
0.58
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
Thermal Resistance, Junction-to-
Ambient
RthJA
* : Drain current limited by maximum junction temperature.
2.8
62.5
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
A
C
M
N
G
FF
123
DPAK (1)
KF3N60I
H
J
P
L
DIM MILLIMETERS
A 6.6+_0.2
B 6.1+_0.2
C 5.34 +_0.3
D 0.7+_0.2
E 9.3 +_0.3
F 2.3+_ 0.2
G 0.76+_0.1
H 2.3+_0.1
J 0.5+_ 0.1
K 1.8 +_ 0.2
L 0.5 +_ 0.1
M 1.0 +_ 0.1
N 0.96 MAX
P 1.02 +_ 0.3
1. GATE
2. DRAIN
3. SOURCE
PIN CONNECTION
D
IPAK(1)
G
S
2010. 12. 20
Revision No : 0
1/6



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KF3N60D/I
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
BVDSS
ID=250 , VGS=0V
BVDSS/ Tj ID=250 , Referenced to 25
IDSS VDS=600V, VGS=0V,
Vth VDS=VGS, ID=250
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=1.15A
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=480V, ID=3A
VGS=10V
(Note4,5)
VDD=300V
ID=3A
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
IS
VGS<Vth
ISP
VSD IS=2.3A, VGS=0V
trr IS=3A, VGS=0V,
Qrr dIs/dt=100A/
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=24.5mH, IS=3A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 3A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
11
KF3N60
KF3N60
D 001
2
I 001
2
1 PRODUCT NAME
2 LOT NO
MIN. TYP. MAX. UNIT
600 - - V
- 0.61 - V/
- - 10
2.5 - 4.5 V
- - 100 nA
- 2.8 3.3
- 8.5 -
- 1.8 -
- 3.6 -
- 25 -
- 25 -
- 40 -
- 20 -
- 355 -
- 45 -
- 4.4 -
nC
ns
pF
- -3
A
- - 12
- - 1.4 V
- 300 -
ns
- 1.5 -
C
2010. 12. 20
Revision No : 0
2/6



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KF3N60D/I
Fig1. ID - VDS
101 VGS=10V
VGS=7V
100 VGS=5V
10-1
10-2
0.1
1 10
Drain - Source Voltage VDS (V)
100
1.2
VGS = 0V
IDS = 250
1.1
Fig3. BVDSS - Tj
1.0
0.9
0.8
-100
-50 0 50 100
Junction Temperature Tj ( C )
150
Fig5. IS - VSD
102
101
TC=100 C
25 C
100
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source - Drain Voltage VSD (V)
2010. 12. 20
Revision No : 0
VDS=30V
101
Fig2. ID - VGS
TC=100 C
100 25 C
10-1
2
468
Gate - Source Voltage VGS (V)
10
Fig4. RDS(ON) - ID
6.0
5.0
VGS=6V
4.0
VGS=10V
3.0
2.0
1.0
0
01 23 45 6
Drain Current ID (A)
Fig6. RDS(ON) - Tj
3.0
VGS =10V
2.5 IDS = 1.15A
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100
Junction Temperature Tj ( C)
150
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KF3N60D/I
10000
Fig 7. C - VDS
Ciss
100
Coss
10
Crss
1
0 5 10 15 20 25 30 35 40
Drain - Source Voltage VDS (V)
12
ID=3A
10
Fig8. Qg- VGS
8
6 VDS = 480V
4
2
0
0 2 4 6 8 10 12 14 16
Gate - Charge Qg (nC)
Fig9. Safe Operation Area
101 Operation in this
area is limited by RDS(ON)
100
10µs
100µs
1ms
10-1
Tc= 25 C
Tj = 150 C
102 Single pulse
100
101
102
Drain - Source Voltage VDS (V)
10ms
DC
103
Fig10. ID - Tj
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 25 50 75 100 125 150
Junction Temperature Tj ( C)
Fig11. Transient Thermal Response Curve
101
2010. 12. 20
100 Duty=0.5
0.2
0.1
10-1
0.05
0.02
0.01
Single
Pulse
10-2
10-5
10-4
10-3 10-2
PDM
t1
t2
- Duty Factor, D= t1/t2
- RthJC =
Tj(max) - Tc
PD
10-1 100 101
TIME (sec)
Revision No : 0
4/6




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