KF3N50FZ Datasheet PDF - KEC


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KF3N50FZ
KEC

Part Number KF3N50FZ
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Page 6 Pages

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SEMICONDUCTOR
TECHNICAL DATA
KF3N50FZ/FS
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
VDSS= 500V, ID= 3A
Drain-Source ON Resistance : RDS(ON)=2.5
Qg(typ) = 7.50nC
(Max) @VGS = 10V
trr(typ) = 120ns (KF3N50FS)
trr(typ) = 300ns (KF3N50FZ)
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
Drain Power
Dissipation
Tc=25
Derate above 25
PD
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
Thermal Resistance, Junction-to-Case RthJC
Thermal Resistance, Junction-to-
Ambient
RthJA
* : Drain Current limited by maximum junction temperature
PIN CONNECTION
(KF3N50FZ/FS)
D
RATING
500
30
3*
1.8*
9*
110
4
10
25
0.2
150
-55 150
5.0
62.5
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
AC
E
LM
D
NN
123
R
H
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
*Single Gauge Lead Frame
TO-220IS (1)
G
S
2014. 6. 29
Revision No : 1
1/6



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KF3N50FZ/FS
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
SYMBOL
TEST CONDITION
BVDSS
ID=250 , VGS=0V
BVDSS/ Tj ID=250 , Referenced to 25
IDSS VDS=500V, VGS=0V,
Vth VDS=VGS, ID=250
IGSS VGS= 25V, VDS=0V
RDS(ON)
VGS=10V, ID=1.5A
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=400V, ID=3A
VGS=10V
(Note4,5)
VDD=250V
ID=3A
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
KF3N50FZ
KF3N50FS
KF3N50FZ
KF3N50FS
IS
VGS<Vth
ISP
VSD IS=3A, VGS=0V
trr
IS=3A, VGS=0V,
dIs/dt=100A/
Qrr
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=22mH, IS=3A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 3A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
MIN. TYP. MAX. UNIT
500 - - V
- 0.55 - V/
- - 10
2.5 - 4.5 V
- - 10
- 2.0 2.5
- 8.0 -
- 2.0 -
- 3.5 -
- 15 -
- 20 -
- 25 -
- 20 -
- 350 -
- 45 -
- 4.5 -
nC
ns
pF
- -3
A
- - 12
- - 1.4 V
- 300 -
- 120 -
ns
- 1.1 -
- 0.25 -
C
1
KF3N50
FZ 001
1
KF3N50
2 FS 001
2
1 PRODUCT NAME
2 LOT NO
2014. 6. 29
Revision No : 1
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KF3N50FZ/FS
Fig1. ID - VDS
101
VGS=10V
VGS=7V
100
VGS=5V
10-1
10-2
0.1
1 10
Drain - Source Voltage VDS (V)
100
1.2
VGS = 0V
IDS = 250
1.1
Fig3. BVDSS - Tj
1.0
0.9
0.8
-100
-50 0 50 100
Junction Temperature Tj ( C )
150
Fig5. IS - VSD
102
101
TC=100 C
25 C
100
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source - Drain Voltage VSD (V)
2014. 6. 29
Revision No : 1
VDS=30V
101
Fig2. ID - VGS
TC=100 C
25 C
100
10-1
2
468
Gate - Source Voltage VGS (V)
10
Fig4. RDS(ON) - ID
6
5
4
3 VGS=7V
2 VGS=10V
1
0
01 23 45 6
Drain Current ID (A)
Fig6. RDS(ON) - Tj
3.0
VGS =10V
2.5 IDS = 1.5A
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100
Junction Temperature Tj ( C)
150
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KF3N50FZ/FS
Fig 7. C - VDS
1000
Ciss
100
Coss
10
Crss
1
0 5 10 15 20 25 30 35 40
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
101 10µs
100µs
100 1ms
10-1
Operation in this
area is limited by RDS(ON)
Tc= 25 C
Tj = 150 C
10-2 Single pulse
100
101
102
Drain - Source Voltage VDS (V)
10ms
DC
103
12
ID=3A
10
Fig8. Qg- VGS
8
VDS = 400V
6
4
2
0
0 2 4 6 8 10 12
Gate - Charge Qg (nC)
Fig10. ID - Tj
3.5
3
2.5
2
1.5
1
0.5
0
0 25 50 75 100 125 150
Junction Temperature Tj ( C)
2014. 6. 29
Fig11. Transient Thermal Response Curve
101
Duty=0.5
100 0.2
0.1
0.05
10-1
0.02
0.01
Single Pulse
PDM
t1
t2
- Duty Factor, D= t1/t2
- Rth(j-c) = 5.0 C/W Max
10-2
10-5 10-4 10-3 10-2 10-1 100 101
TIME (sec)
Revision No : 1
4/6




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