KAE-08151 Datasheet PDF - ON Semiconductor

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KAE-08151
ON Semiconductor

Part Number KAE-08151
Description EMCCD Image Sensor
Page 30 Pages


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KAE-08151
Advance Information
2856 (H) x 2856 (V) Interline
Transfer EMCCD Image Sensor
The KAE−08151 Image Sensor is a 8.1 Mp, 4/3format, Interline
Transfer EMCCD image sensor that provides exceptional imaging
performance in extreme low light applications. Each of the sensor’s
four outputs incorporates both a conventional horizontal CCD register
and a high gain EMCCD register.
An intra-scene switchable gain feature samples each charge packet
on a pixel-by-pixel basis. This enables the camera system to determine
whether the charge will be routed through the normal gain output or
the EMCCD output based on a user selectable threshold. This feature
enables imaging in extreme low light, even when bright objects are
within a dark scene, allowing a single camera to capture quality
images from sunlight to starlight.
This image sensor is based on an advanced 5.5-micron Interline
Transfer CCD Platform, and features extended dynamic range,
excellent imaging performance, and a flexible readout architecture
that enables use of 1, 2, or 4 outputs. A vertical overflow drain
structure suppresses image blooming, provides excellent MTF, and
enables electronic shuttering for precise exposure.
Table 1. GENERAL SPECIFICATIONS
Parameter
Typical Value
Architecture
Interline CDD; with EMCCD
Total Number of Pixels
2880 (H) × 2880 (V)
Number of Effective Pixels
2928 (H) × 2904 (V)
Number of Active Pixels
2856 (H) × 2856 (V)
Pixel Size
5.5 mm(H) × 5.5 mm (V)
Active Image Size
15.71 mm (H) × 15.71 mm (V)
22.22 mm (Diagonal)
4/3Optical Format
Aspect Ratio
1:1
Number of Outputs
Charge Capacity
Output Sensitivity
1, 2, or 4
20,000 e
44 mV/e
Quantum Sensitivity
Mono/Color (RGB)
50% / 33%, 41%, 43%
Readout Noise (20 MHz)
Normal Mode (1× Gain)
Intra-Scene Mode (20× Gain)
9 erms
< 1 erms
Dark Current (0°C)
Photodiode, VCCD
< 0.1, 6 e/s
Dynamic Range
Normal Mode (1× Gain)
Intra-Scene Mode (20× Gain)
66 dB
86 dB
Charge Transfer Efficiency
0.999999
Blooming Suppression
> 1000 X
Smear
Image Lag
−100 dB
< 1 e
Maximum Pixel Clock Speed
40 MHz
Maximum Frame Rate
Normal Mode, Intra-Scene Mode
14 fps (40 MHz), 8 fps (20 MHz)
Package Type
155 Pin PGA
Cover Glass
Clear Glass, Taped
NOTE: All Parameters are specified at T = −10°C unless otherwise noted.
www.onsemi.com
Figure 1. KAE−08151 Interline
Transfer EMCCD Image Sensor
Features
Intra-Scene Switchable Gain
Wide Dynamic Range
Low Noise Architecture
Exceptional Low Light Imaging
Global Shutter
Excellent Image Uniformity and MTF
Bayer Color Pattern and Monochrome
Applications
Surveillance
Scientific Imaging
Medical Imaging
Intelligent Transportation
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
This document contains information on a new
product. Specifications and information herein
are subject to change without notice.
This document, and the information contained herein,
is CONFIDENTIAL AND PROPRIETARY and the
property of Semiconductor Components Industries,
LLC., dba ON Semiconductor. It shall not be used,
published, disclosed or disseminated outside of the
Company, in whole or in part, without the written
permission of ON Semiconductor. Reverse
engineering of any or all of the information contained
herein is strictly prohibited.
E 2016, SCILLC. All Rights Reserved.
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. P2
1
Publication Order Number:
KAE−08151/D



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CONFIDENTIAL AND PROPRIETARY
NOT FOR PUBLIC RELEASE
KAE−08151
ORDERING INFORMATION
US export controls apply to all shipments of this product
designated for destinations outside of the US and Canada,
requiring ON Semiconductor to obtain an export license
from the US Department of Commerce before image sensors
or evaluation kits can be exported.
Table 2. ORDERING INFORMATION − KAE−08151 IMAGE SENSOR
Part Number
KAE−08151−ABA−JP−FA*
Description
Monochrome, Special Microlens, PGA Package,
Taped Clear Cover Glass (No Coatings), Standard Grade
Marking Code
KAE−08151−ABA
Serial Number
KAE−08151−ABA−JP−EE*
Monochrome, Special Microlens, PGA Package,
Taped Clear Cover Glass (No Coatings), Engineering Grade
KAE−08151−FBA−JP−FA*
Color (Bayer RGB), Special Microlens, PGA Package,
Taped Clear Cover Glass (No Coatings), Standard Grade
KAE−08151−FBA
Serial Number
KAE−08151−FBA−JP−EE*
Color (Bayer RGB), Special Microlens, PGA Package,
Taped Clear Cover Glass (No Coatings), Engineering Grade
*Part numbers are listed for informational purposes only, and are not available for orders at this time. Please contact ON Semiconductor for
availability dates.
See the ON Semiconductor Device Nomenclature document (TND310/D) for a full description of the naming convention
used for image sensors. For reference documentation, including information on evaluation kits, please visit our web site at
www.onsemi.com.
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DEVICE DESCRIPTION
Architecture
1 28
3
1242
450
450
12
21
KAE−08151
33
837 837
1464
1464
12
12
CONFIDENTIAL AND PROPRIETARY
NOT FOR PUBLIC RELEASE
1242
450
450
12
28 1
3
12
24 12
2856 x 2856
12 24
21
3
1 28
12
450
450
1242
12
12
1464
1464
837 837
33
12
12
450
450
1242
3
28 1
Figure 2. Block Diagram
Dark Reference Pixels
There are 12 dark reference rows at the top and bottom of
the image sensor, as well as 24 dark reference columns on the
left and right sides. However, the rows and columns at the
perimeter edges should not be included in acquiring a dark
reference signal, since they may be subject to some light
leakage.
Active Buffer Pixels
12 unshielded pixels adjacent to any leading or trailing
dark reference regions are classified as active buffer pixels.
These pixels are light sensitive but are not tested for defects
and non-uniformities.
Image Acquisition
An electronic representation of an image is formed when
incident photons falling on the sensor plane create
electron-hole pairs within the individual silicon
photodiodes. These photoelectrons are collected locally by
the formation of potential wells at each photo-site. Below
photodiode saturation, the number of photoelectrons
collected at each pixel is linearly dependent upon light level
and exposure time and non-linearly dependent on
wavelength. When the photodiodes charge capacity is
reached, excess electrons are discharged into the substrate to
prevent blooming.
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CONFIDENTIAL AND PROPRIETARY
NOT FOR PUBLIC RELEASE
Physical Description
Pin Grid Array Configuration
F
E
D
KAE−08151
C
B
A
25 23 21 19 17 15 13 11 9 7 5 3 1
26 24 22 20 18 16 14 12 10 8 6 4 2
Figure 3. PGA Package Pin Designations (Bottom View)
Table 3. PIN DESCRIPTION
Pin No.
A7
Label
VOUT2a
A13 GND
C7 H2SW2a
C8 H2SW3a
A8 H2La
B7 RG23a
A25 GND
A10 VOUT3a
A9 VDD3a
C9 H2SEMa
C10 H1SEMa
B9 H2BEMa
B10 H1BEMa
A11 H1a
A12 H2a
B4 GND
Description
Video Output 2, Quadrant a
Ground
HCCD Output 2 Selector, Quadrant a
HCCD Output 3 Selector, Quadrant a
HCCD Last Gate, Outputs 1, 2 and 3, Quadrant a
Amplifier 2 and 3 Reset, Quadrant a
Ground
Video Output 3, Quadrant a
Amplifier 3 Supply, Quadrant a
EMCCD Storage Multiplier Phase 2, Quadrant a
EMCCD Storage Multiplier Phase 1, Quadrant a
EMCCD Barrier Phase 2, Quadrant a
EMCCD Barrier Phase 1, Quadrant a
HCCD Phase 1, Quadrant a
HCCD Phase 2, Quadrant a
Ground
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