K3192 Datasheet PDF - Panasonic Semiconductor


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K3192
Panasonic Semiconductor

Part Number K3192
Description 2SK3192
Page 4 Pages

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Power MOSFETs
2SK3192
Silicon N-channel power MOSFET
Features
Avalanche energy capability guaranteed
High-speed switching
Low ON resistance Ron
No secondary breakdown
Applications
PDP
Switching mode regulator
15.0±0.3
11.0±0.2
Unit: mm
5.0±0.2
(3.2)
φ 3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability *
VDSS
VGSS
ID
IDP
EAS
250
±30
±30
±120
925
V
V
A
A
mJ
Power dissipation
Channel temperature
Storage temperature
PD 100 W
Ta = 25°C
3
Tch 150 °C
Tstg 55 to +150 °C
Note) *: L = 1.74 mH, IL = 30 A, VDD = 50 V, 1 pulse, Ta = 25°C
10.9±0.5
123
5.45±0.3
1: Gate
2: Drain
3: Source
EIAJ: SC-92
TOP-3F-B1 Package
Marking Symbol: K3192
Internal Connection
D
G
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common source)
VDSS
IDSS
IGSS
Vth
RDS(on)
Yfs
Ciss
ID = 1 mA, VGS = 0
VDS = 200 V, VGS =
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 15 A
VDS = 10 V, ID = 15 A
VDS = 10 V, VGS = 0, f = 1 MHz
Short-circuit output capacitance
(Common source)
Coss
Reverse transfer capacitance
(Common source)
Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
VDD = 100 V, ID = 15 A, RL = 6.7
VGS = 10 V
S
Min Typ Max
250
00
±1
24
50 68
8 15
4 200
Unit
V
µA
µA
V
m
S
pF
1 600
pF
650 pF
45 ns
115 ns
330 ns
130 ns
Publication date: January 2004
SJG00029BED
1
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2SK3192
Electrical Characteristics (continued) TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Gate charge load
Gate-source charge
VDSF
trr
Qrr
Qg
Qgs
IDR = 30 A, VGS = 0
L = 230 µH, VDD = 100 V
IDR = 15 A, di/dt = 100 A/µs
VDD = 100 V, ID = 15 A
VGS = 10 V
1.5
260
1.6
95
34
V
ns
µC
nC
nC
Gate-drain charge
Thermal resistance (ch-c)
Thermal resistance (ch-a)
Qgd
Rth(ch-c)
Rth(ch-a)
12 nC
1.25 °C/W
41.7 °C/W
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Safe operation area
103 Non repetitive pulse
TC = 25°C
IDP
102
t = 100 µs
ID
DC
10
1 ms
10 ms
1 100 ms
101
1
10 102 103
Drain-source voltage VDS (V)
120
(1)
100
PD Ta
(1) TC = Ta
(2) Without heat sink
PD = 3 W
80
60
40
20
(2)
0
0
50
100 150
Ambient temperature Ta (°C)
VGS ID
50
VDS = 10 V
TC = 25°C
40
30
20
10
0
0 2468
10
Drain current ID (A)
RDS(on) ID
100
VGS = 10 V
TC = 25°C
80
60
40
20
0
0 10 20 30
Drain current ID (A)
ID VDS
30
VGS = 10 V
TC = 25°C
25
20
5V
15
10
4.5 V
5
4V
3V
0
0 2 4 6 8 10 12 14
Drain-source voltage VDS (V)
Yfs  ID
30
VDS = 10 V
TC = 25°C
25
20
15
10
5
0
0 5 10 15 20 25 30 35
Drain current ID (A)
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Ciss , Coss , Crss VDS
104
f = 1 MHz
TC = 25°C
103
102
10
0 20 40 60 80 100
Drain-source voltage VDS (V)
2SK3192
SJG00029BED
3



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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP




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