K3155 Datasheet PDF - Hitachi Semiconductor


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K3155
Hitachi Semiconductor

Part Number K3155
Description 2SK3155
Page 9 Pages

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2SK3155
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS = 100 mtyp.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
TO–220FM
ADE-208-768C (Z)
4th. Edition
Februaty 1999
D
G
S
123
1. Gate
2. Drain
3. Source



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2SK3155
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
I Note3
AP
E Note3
AR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Electrical Characteristics (Ta = 25°C)
Ratings
150
±20
15
60
15
15
16
30
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
150
±20
1.0
8.5
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
t d(on)
tr
t d(off)
tf
VDF
t rr
Note: 4. Pulse test
Typ
0.10
0.12
14
850
300
160
13
100
195
110
0.9
140
Max
±10
10
2.5
0.13
0.15
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 150 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 8 A, VGS = 10 VNote4
ID = 8 A, VGS = 4 V Note4
ID = 8 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 8 A, VGS = 10 V
RL = 3.75
IF = 15 A, VGS = 0
IF = 15 A, VGS = 0
diF/ dt = 50 A/ µs
2



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Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0 50 100 150 200
Case Temperature Tc (°C)
2SK3155
Maximum Safe Operation Area
500
200
100
50
20
10
5
2
1
0.5
OthpiseararetioanisiDnC(TPcOW=p=e21r05am°tiCos(n)1s1h0o0t1) 0µsµs
0.2 limited by R DS(on)
0.1 Ta = 25°C
0.05
0.1 0.3 1 3
10 30 100 300 1000
Drain to Source Voltage V DS (V)
Typical Output Characteristics
20
10 V
5V
Pulse Test
4V
16 3.5 V
12
3V
8
4
VGS = 2.5 V
0 2 4 6 8 10
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
20
V DS = 10 V
Pulse Test
16
12
8
75°C
25°C
4
Tc = –25°C
0 1 23 45
Gate to Source Voltage V GS (V)
3



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2SK3155
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
5
Pulse Test
4
3
2 I D = 15 A
10 A
1
5A
0 4 8 12 16 20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
0.05
VGS = 4 V
10 V
0.02
0.01
0.1
0.3 1
3 10 30
Drain Current I D (A)
100
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
5A
0.3 I D = 10 A
0.2
V GS = 4 V
0.1
10 A 5 A
10 V
0
–40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
1000
300
Tc = –25 °C
100
30
75 °C
1
25 °C
0.3
0.1
0.1 0.2
V DS = 10 V
Pulse Test
0.5 1 2 5 10 20 50 100
Drain Current I D (A)
4




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