K2995 Datasheet PDF - Toshiba Semiconductor


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K2995
Toshiba Semiconductor

Part Number K2995
Description 2SK2995
Page 6 Pages

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2SK2995
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2995
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
l Low drainsource ON resistance : RDS (ON) = 48 m(typ.)
l High forward transfer admittance : |Yfs| = 30 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 250 V)
l Enhancementmode :
Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics S
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Not e 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Not e 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
ymbol
VDSS
VDGR
VGSS ±
ID
IDP
PD
EAS 925
IAR
EAR 9
Tch 150
Tstg
Rating
250
250
20
30
120
90
30
55~150 °
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
C
JEDEC
JEITA
TOSHIBA
2-16F1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics S
ymbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc) 1.
Rth (cha) 41.
39
6
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.74 mH, IAR = 30 A, RG = 25
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-09-02
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Electrical Characteristics (Ta = 25°C)
Characteristics S
ymbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs| V
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 250 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 15 A
VGS = 10 V, ID = 15 A
DS = 10 V, ID = 15 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) Charge
toff
Qg
Qgs VDD 200 V, VGS = 10 V, ID = 30 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics S
Continuous drain reverse current
(Not e 1)
Pulse drain reverse current
(Not e 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
ymbol
Test Condition
IDR
IDRP
VDSF
trr
Qrr
IDR = 30 A, VGS = 0 V
IDR = 30 A, VGS = 0 V
dIDR / dt = 100 A / µs
Marking
2SK2995
Min Typ.
——
——
250 —
1.5 —
— 48
15 30
5400
— 580
— 1900
Max
±10
100
3.5
68
Unit
µA
µA
V
V
m
S
pF
20 —
— 50 —
ns
— 35 —
— 200 —
— 132 —
— 80 — nC
— 52
Min Typ. Max Unit
— — 30 A
— — 120
— 3.
2.0
270 —
0—
A
V
ns
µC
2 2002-09-02



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