K2930 Datasheet PDF - Hitachi Semiconductor


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K2930
Hitachi Semiconductor

Part Number K2930
Description 2SK2930
Page 10 Pages

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2SK2930
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS =0.020 typ.
High speed switching
4V gate drive device can be driven from 5V source
Outline
TO–220AB
ADE-208-553C (Z)
4th. Edition
Jun 1998
D
G
S
1
2
3
1. Gate
2. Drain(Flange
3. Source



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2SK2930
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
I Note3
AP
E Note3
AR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW 10µs, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Ratings
60
±20
35
140
35
35
105
50
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2



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2SK2930
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
60
±20
1.5
14
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
t d(on)
tr
t d(off)
tf
VDF
t rr
Note: 4. Pulse test
Typ
0.020
0.032
23
1100
540
200
15
180
175
195
0.95
40
Max
±10
10
2.5
0.026
0.050
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10mA, VGS = 0
IG = ±100µA, VDS = 0
VGS = ±16V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1mA, VDS = 10V
ID = 15A, VGS = 10VNote4
ID = 15A, VGS = 4V Note4
ID = 15A, VDS = 10V Note4
VDS = 10V
VGS = 0
f = 1MHz
ID = 15A, VGS = 10V
RL = 2
IF = 35A, VGS = 0
IF = 35A, VGS = 0
diF/ dt =50A/µs
3



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2SK2930
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0 50 100 150 200
Case Temperature Tc (°C)
Maximum Safe Operation Area
200
100
10 µs
50
20
10
5
PW
=
10
ms
1 ms
(1shot)
Operation in
2 this area is
1 limited by R DS(on)
0.5
Ta = 25 °C
0.2
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS(V)
Typical Output Characteristics
50
4.5 V
10 V
Pulse Test
40 6 V
5V
4V
30
3.5 V
20
10 VGS = 3 V
0 2 4 6 8 10
Drain to Source Voltage V DS(V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
Tc = 75°C
25°C
20
–25°C
10
0 1 23 45
Gate to Source Voltage V G(SV)
4




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