K2835 Datasheet PDF - Toshiba Semiconductor

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K2835
Toshiba Semiconductor

Part Number K2835
Description 2SK2835
Page 6 Pages


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2SK2835
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2835
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
l Low drainsource ON resistance : RDS (ON) = 0.56 (typ.)
l High forward transfer admittance : |Yfs| = 4.5 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDS = 200 V)
l Enhancementmode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
200
200
±20
5
20
1.3
65
5
0.13
150
55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-8M1B
Weight: 0.54 g (typ.)
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to
ambient
Rth (cha)
96.1 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.2 mH, RG = 25 , IAR = 5 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
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Electrical Characteristics (Ta = 25°C)
2SK2835
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 200 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 2.5 A
VDS = 10 V, ID = 2.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Min Typ. Max Unit
— — ±10
— — 100
200 —
1.5 — 3.5
— 0.56 0.8
2.0 4.5 —
— 440 —
— 35 —
— 120 —
µA
µA
V
V
S
pF
— 15 —
Switching time
Turnon time
Fall time
ton
tf
— 20 —
ns
— 15 —
Turnoff time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) Charge
toff
Qg
Qgs VDD 100 V, VGS = 10 V, ID = 5 A
Qgd
— 60 —
— 10 —
— 6 — nC
—4—
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
Min
——
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V, dIDR / dt = 100 A / µs
Typ. Max Unit
—5 A
150
0.45
20
2.0
A
V
ns
µC
Marking
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