K2788 Datasheet PDF - Hitachi Semiconductor


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K2788
Hitachi Semiconductor

Part Number K2788
Description 2SK2788
Page 9 Pages

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2SK2788
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.12typ (VGS = 10 V, ID = 1 A)
Low drive current
High speed switching
4V gate drive devices.
Outline
UPAK
21
3
D
4
G
S
1. Gate
2. Drain
3. Source
4. Drain
ADE-208-538
1st. Edition



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2SK2788
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
60
±20
2
4
2
1
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10µs, duty cycle 1 %
2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm)
Unit
V
V
A
A
A
W
°C
°C
2



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Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Zero gate voltege drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Notes: 1. Pulse test
2. Marking is “VY”
Symbol
V(BR)DSS
V(BR)GSS
I DSS
I GSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
t d(on)
tr
t d(off)
tf
VDF
t rr
Min
60
±20
1.0
1.6
2SK2788
Typ
0.12
0.16
2.8
180
90
30
9
15
40
35
0.9
35
Max
10
±10
2.0
0.16
0.25
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = 60 V, VGS = 0
VGS = ±16V, VDS = 0
ID = 1mA, VDS = 10V
ID = 1 A, VGS = 10V*1
ID = 1A, VGS = 4V*1
ID = 1A, VDS = 10V*1
VDS = 10V
VGS = 0
f = 1MHz
VGS = 10V, ID = 1A
RL = 30
ID = 2A, VGS = 0
IF = 2A, VGS = 0
diF/ dt = 50A/µs
3



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2SK2788
Main Characteristics
Power vs. Temperature Derating
2.0
Test condition :
When using the alumina ceramic
1.5 board (12.5 x 20 x 0.7 mm)
1.0
0.5
0 50 100 150 200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
10
100 µs
3
1
0.3 Operation in
PW
=
10
ms
1 ms
(1shot)
this area is
0.1 limited by R DS(on)
0.03
0.01 Ta = 25 °C
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
5
6V 5V
10 V 4 V
4
3.5 V
Pulse Test
3V
3
2
2.5 V
1
VGS = 2 V
0 2 4 6 8 10
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
5
4
Tc = 75°C
3
2 –25°C
25°C
1
V DS = 10 V
Pulse Test
0 2 4 6 8 10
Gate to Source Voltage V GS (V)
4




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