K2719 Datasheet PDF - Toshiba Semiconductor


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K2719
Toshiba Semiconductor

Part Number K2719
Description 2SK2719
Page 6 Pages

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2SK2719
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)
2SK2719
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 3.7 (typ.)
High forward transfer admittance: |Yfs| = 2.6 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics S
ymbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) V
Gate-source voltage
Drain current
DC
(Note 1)
Pulse
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy
(Note 3)
Channel temperature
Storage temperature range
VDSS
DGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
900
900
±30
3
9
125
295
3
12.5
150
55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
1. Gate
2. Drain (heat sink)
3. Source
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics S
ymbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
1.0
Rth (ch-a) 50.0
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 58 μH, RG = 25 Ω, IAR = 45 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2009-09-29
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Electrical Characteristics (Ta = 25°C)
2SK2719
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 720 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 1.5 A
VDS = 20 V, ID = 1.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Min Typ.
⎯⎯
±30
⎯⎯
900
2.0
0.65
3.7
2.6
750
10
70
Max Unit
±10
100
4.0
4.3
pF
μA
V
μA
V
V
Ω
S
pF
pF
tr
10 V
VGS
ton 0 V
tf
15
ID = 1.5 A VOUT
55
ns
VDD ∼− 200 V
30
toff Duty 1%, tw = 10 μs
110
Qg
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 3 A
Qgd
25 nC
13 nC
12 nC
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristics S
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
ymbol
Test Condition
IDR
IDRP
VDSF
trr
Qrr
IDR = 3 A, VGS = 0 V
IDR = 3 A, VGS = 0 V
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯⎯ 3 A
⎯ ⎯9
⎯⎯
1100
7.5
1.9
A
V
ns
μC
Marking
TOSHIBA
K2719
Part No. (or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2 2009-09-29



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ID – VDS
5
Common source
Tc = 25°C
Pulse test
4
8
10
3
5.5
6
5.25
5
2 4.75
4.5
1
VGS = 4 V
0
0 4 8 12 16 20
Drain-source voltage VDS (V)
ID – VGS
6
Common source
5
VDS = 20 V
Pulse test
Tc = −55°C
25
4
3
100
2
1
0
0 2 4 6 8 10 12
Gate-source voltage VGS (V)
2SK2719
ID – VDS
5
Common source
8 Tc = 25°C
10 6 Pulse test
4
5.75
3
5.5
2 5.25
5
1
VGS = 4.5 V
0
0 10 20 30 40 50
Drain-source voltage VDS (V)
VDS – VGS
25
Common source
Tc = 25°C
Pulse test
20
15
ID = 3 A
10
1.5
5
0.8
0
0 4 8 12 16 20
Gate-source voltage VGS (V)
10
5
3
0.1
0.5
0.3
0.1
0.1
Yfs– ID
Tc = −55°C
25
100
Common source
VDS = 20 V
Pulse test
0.3
1 10
3 30
Drain current ID (A)
RDS (ON) – ID
30 Common source
Tc = 25°C
VGS = 10 V
Pulse test
10
5
3
1
0.5
0.1
0.3 1 3 10
Drain current ID (A)
30
3 2009-09-29



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RDS (ON) – Tc
20
Common source
VGS = 10 V
Pulse test
16
12
8 ID = 3 A
1.5 0.8
4
0
80 160 40
0
40 80 120
Case temperature Tc (°C)
2000
1000
500
300
Capacitance – VDS
Ciss
100
50
30 Common source
VGS = 0 V
10
f = 1 MHz
Tc = 25°C
5 Pulse test
0.1 0.3
1
3
Coss
Crss
10 30 100
Drain-source voltage VDS (V)
2SK2719
IDR – VDS
10
Common source
5 Tc = 25°C
3 Pulse test
1
0.5
0.3
0.1
0.05
0.03
0.01
0
10
3
5
0.2 0.4
1
VGS = 0, 1 V
0.6
0.8
1.0
Drain-source voltage VDS (V)
1.2
Vth – Tc
5
Common source
VDS = 10 V
4 ID = 1 mA
Pulse test
3
2
1
0
80 40 0 40 80 120 160
Case temperature Tc (°C)
PD – Tc
150
100
50
0
0 40 80 120 160
Case temperature T c (°C)
Dynamic Input/Output Characteristics
500 Common source 20
Tc = 25°C
ID = 3 A
400
Pulse test
16
VDS
VDD = 100 V
300 12
200
400
200 8
100 VGS
4
00
0 8 16 24 32 40
Total gate charge Qg (nC)
4 2009-09-29




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