K2568 Datasheet PDF - Hitachi Semiconductor


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K2568
Hitachi Semiconductor

Part Number K2568
Description 2SK2568
Page 6 Pages

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2SK2568
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
Suitable for switching regulator and DC-DC converter
Outline
TO-3P
Preliminary
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source



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2SK2568
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID*2
I *1
D(pulse)
I DR* 2
Pch*2
Tch
Tstg
Ratings
500
±30
12
48
12
100
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2



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2SK2568
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
500
Gate to source breakdown
voltage
V(BR)GSS
±30
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
2.0
Forward transfer admittance |yfs|
6.0
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note: 1. Pulse Test
Ciss
Coss
Crss
t d(on)
tr
t d(off)
tf
VDF
t rr
Typ Max Unit
— —V
— —V
±10 µA
— 250 µA
— 3.0 V
0.5 0.6
10 — S
1560
450
72
22
78
140
60
1.1
pF
pF
pF
ns
ns
ns
ns
V
105 —
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 6 A
VGS = 10 V*1
ID = 6 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 6 A
VGS = 10 V
RL = 5
IF = 12 A, VGS = 0
IF = 12 A, VGS = 0
diF / dt = 100 A / µs
3



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2SK2568
Power vs. Temperature Derating
200
150
100
50
0 50 100 150 200
Case Temperature Tc (°C)
4




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