K2085 Datasheet PDF - Hitachi Semiconductor


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K2085
Hitachi Semiconductor

Part Number K2085
Description 2SK2085
Page 9 Pages

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2SK2085
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for Switching regulator, DC - DC converter
Outline
TO-92 Mod
D 321
1. Source
G 2. Drain
3. Gate
S



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2SK2085
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
100
±20
1.0
4.0
1.0
0.9
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2



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2SK2085
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
100
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
1.0
Typ
0.6
0.75
Forward transfer admittance |yfs|
0.7 1.2
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note 1. Pulse Test
Ciss
Coss
Crss
t d(on)
tr
t d(off)
tf
VDF
t rr
130
50
12
7
6.5
55
20
0.85
80
Max
±10
100
2.0
0.9
1.35
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 80 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 0.5 A
VGS = 10 V*1
ID = 0.5 A
VGS = 4 V*1
ID = 0.5 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 0.5 A
VGS = 10 V
RL = 60
IF = 1.0 A, VGS = 0
IF = 1.0 A, VGS = 0,
diF / dt = 50 A / µs
3



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2SK2085
Power vs. Temperature Derating
1.6
1.2
0.8
0.4
0 50 100 150 200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
10
3
1
0.3
0.1
0.03
Operation in DC
this area is
limited by R DS(on)
OpPeWra(1t=iso1hn01otmm)10ss010µsµs
0.01
0.003
Ta = 25°C
0.001
0.1 0.3 1 3 10
Drain to Source Voltage
30 100 200
V DS (V)
Typical Output Characteristics
5
6 V Pulse Test
8V 5V
4 10 V
4V
3 3.5 V
2 3V
1 2.5 V
VGS = 2 V
0 2 4 6 8 10
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
5
4 V DS = 10 V
Pulse Test
3
2
1
Tc = 25 °C
–25 °C
75 °C
0 12345
Gate to Source Voltage V GS (V)
4




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