K1933 Datasheet PDF - Hitachi Semiconductor


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K1933
Hitachi Semiconductor

Part Number K1933
Description 2SK1933
Page 10 Pages

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2SK1933
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
No secondary breakdown
Suitable for Switching regulator
Outline
TO-3P
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source



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2SK1933
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
900
±30
10
30
10
150
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2



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2SK1933
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max
Drain to source breakdown
voltage
V(BR)DSS
900
Gate to source breakdown
voltage
V(BR)GSS
±30
Gate to source leak current IGSS
— — ±10
Zero gate voltage drain current IDSS
— — 250
Gate to source cutoff voltage VGS(off) 2.0 —
3.0
Static drain to source on state RDS(on)
resistance
0.9 1.2
Forward transfer admittance |yfs|
4.5 7
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body tp drain diode reverse
recovery time
Note 1. Pulse Test
Ciss
Coss
Crss
t d(on)
tr
t d(off)
tf
VDF
t rr
2620
830
320
30
140
285
170
0.9
1600 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 720 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 5 A
VGS = 10 V*1
ID = 5 A
VDS = 20 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 5 A
VGS = 10 V
RL = 6
IF = 10 A, VGS = 0
IF = 10 A, VGS = 0,
diF / dt = 100 A / µs
3



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2SK1933
Power vs. Temperature Derating
150
100
50
0 50 100 150
Case Temperature Tc (°C)
Typical Output Characteristics
10
10 V 6 V
Pulse Test
8
5V
6
4
4V
2
VGS = 3.5 V
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
50
30 10 µs
10
3
1
0.3
0.1
0.05
1
3 10 30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10
Pulse Test
VDS = 20 V
8
6
Tc = 25°C
4
75°C
–25°C
2
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
4




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