K1588 Datasheet PDF - NEC


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K1588
NEC

Part Number K1588
Description 2SK1588
Page 4 Pages

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1588
N-CHANNEL MOSFET
FOR SWITCHING
DESCRIPTION
The 2SK1588 is an N-channel vertical type MOSFET which
can be driven by 2.5 V power supply.
As the MOSFET is driven by low voltage and does not
require consideration of driving current, it is suitable for
appliances including VCR cameras and headphone stereos
which need power saving.
FEATURES
• Directly driven by ICs having a 3 V power supply.
• Low on-state resistance
RDS(on)1 = 0.5 Ω MAX. (VGS = 2.5 V, ID = 1.0 A)
RDS(on)2 = 0.3 Ω MAX. (VGS = 4.0 V, ID = 1.5 A)
ORDERING INFORMATION
PART NUMBER
2SK1588
Marking: NG
PACKAGE
SC-62 (Power Mini Mold)
PACKAGE DRAWING (Unit: mm)
4.5 ±0.1
1.6 ±0.2
1.5 ±0.1
0.42
±0.06
1
2
3
0.42
±0.06
0.47
±0.06
1.5 TYP.
3.0 TYP.
0.41
+0.03
–0.05
1. Source
2. Drain
3. Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
ID(DC)
ID(pulse)
PT
Channel Temperature
Tch
Storage Temperature
Tstg
16
±16
±3.0
±6.0
2.0
150
55 to +150
V
V
A
A
W
°C
°C
Notes 1. PW 10 ms, Duty Cycle 50%
2. Mounted on ceramic substrate of 16 cm2 x 0.7 mm
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17810EJ3V0DS00 (3rd edition)
(Previous No. TC-2352A)
Date Published November 2005 NS CP(K)
Printed in Japan
1991



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ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 16 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±16 V, VDS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)1
VDS = 5.0 V, ID = 1.0 mA
VDS = 3.0 V, ID = 1.0 A
VGS = 2.5 V, ID = 1.0 A
RDS(on)2 VGS = 4.0 V, ID = 1.5 A
Input Capacitance
Ciss VDS = 3.0 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 3.0 V, ID = 1.5 A
Rise Time
tr VGS = 3 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Note Pulsed
TEST CIRCUIT SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
0 10%
VGS 90%
ID 90%
ID
Wave Form
0 10%
td(on)
ID
tr td(off)
90%
10%
tf
ton toff
2SK1588
MIN.
0.8
0.4
TYP.
1.0
3.0
0.25
0.17
240
250
60
140
650
120
160
MAX.
1.0
±5.0
1.6
0.5
0.3
UNIT
μA
μA
V
S
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
2 Data Sheet D17810EJ3V0DS



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TYPICAL CHARACTERISTICS (TA = 25°C)
2SK1588
Data Sheet D17810EJ3V0DS
3



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2SK1588
4 Data Sheet D17810EJ3V0DS




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