K1164 Datasheet PDF - Hitachi Semiconductor


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K1164
Hitachi Semiconductor

Part Number K1164
Description 2SK1164
Page 6 Pages

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2SK1163, 2SK1164
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source



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2SK1163, 2SK1164
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1163
2SK1164
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
450
500
±30
11
40
11
100
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2



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2SK1163, 2SK1164
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
breakdown voltage
2SK1163 V(BR)DSS
2SK1164
450
500
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage 2SK1163 IDSS
drain current
2SK1164
Gate to source cutoff voltage VGS(off)
Static Drain to source 2SK1163 RDS(on)
on state resistance 2SK1164
2.0
Forward transfer admittance |yfs|
5.0
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse
recovery time
t rr
Note: 1. Pulse test
Typ Max Unit
——V
——V
±10 µA
— 250 µA
0.55
0.60
8.0
1150
340
55
17
60
95
50
1.0
3.0
0.7
0.8
400 —
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 5 A, VGS = 10 V *1
ID = 5 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 5 A, VGS = 10 V,
RL = 6
IF = 11 A, VGS = 0
IF = 11 A, VGS = 0,
diF/dt = 100 A/µs
See characteristic curves of 2SK1159, 2SK1160.
3



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2SK1163, 2SK1164
Power vs. Temperature Derating
120
80
40
0 50 100 150
Case Temperature TC (°C)
Maximum Safe Operation Area
50
20
10
5
2
1.0
DC
PW
=
Operation
10
(T
10
1
100
ms
µs
ms (1 shot)
µs
0.5 C = 25°C)
0.2
Ta = 25°C
0.1
0.05
1
3
10
2SK1164
2SK1163
30 100 300 1,000
Drain to Source Voltage VDS (V)
3
1.0 D = 1
0.5
Normalized Transient Thermal Impedance vs. Pulse Width
TC = 25°C
0.3 0.2
0.1
0.1 0.05
0.02
0.03
0.01
0.01
1 Shot Pulse
10 µ
100 µ
θch–c (t) = γ S (t) · θch–c
θch–c = 1.25°C/W, TC = 25°C
PDM
PW
T
D
=
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
4




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