K08T120 Datasheet PDF - Infineon

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K08T120
Infineon

Part Number K08T120
Description IGBT
Page 16 Pages


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TrenchStop® Series
IKW08T120
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Approx. 1.0V reduced VCE(sat)
and 0.5V reduced VF compared to BUP305D
Short circuit withstand time – 10s
Designed for :
G
E
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
PG-TO-247-3
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKW08T120 1200V 8A
1.7V
150C K08T120
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150C
Diode forward current
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Package
PG-TO-247-3
Value
1200
16
8
24
24
16
8
24
20
10
70
-40...+150
-55...+150
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.4 12.06.2013



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TrenchStop® Series
Soldering temperature, 1.6mm (0.063 in.) from case for 10s -
IKW08T120
260
IFAG IPC TD VLS
2
Rev. 2.4 12.06.2013



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TrenchStop® Series
IKW08T120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
1.7
2.3
40
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Symbol
Conditions
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=0.5mA
VGE = 15V, IC=8A
Tj=25C
Tj=125C
Tj=150C
VGE=0V, IF=8A
Tj=25C
Tj=125C
Tj=150C
IC=0.3mA,VCE=VGE
VCE=1200V,
VGE=0V
Tj=25C
Tj=150C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=8A
min.
1200
-
-
-
-
-
-
5.0
-
-
-
-
Value
typ.
-
1.7
2.0
2.2
1.7
1.7
1.7
5.8
-
-
-
5
none
Unit
max.
-V
2.2
-
-
2.2
-
-
6.5
mA
0.2
2.0
100 nA
-S
Ω
IFAG IPC TD VLS
3
Rev. 2.4 12.06.2013



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TrenchStop® Series
IKW08T120
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
- 600 - pF
Output capacitance
Coss
VGE=0V,
- 36 -
Reverse transfer capacitance
Crss
f=1MHz
- 28 -
Gate charge
QGate
VCC=960V, IC=8A
-
53
- nC
VGE=15V
Internal emitter inductance
LE
- 13 - nH
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC(SC)
VGE=15V,tSC10s
-
48
-A
VCC = 600V,
Tj = 25C
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25C,
VCC=600V,IC=8A,
VGE=0/15V,
RG=81,
L2)=180nH,
C2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25C,
VR=600V, IF=8A,
diF/dt=600A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
40
23
450
70
0.67
0.7
1.37
80
1.0
13
420
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
IFAG IPC TD VLS
4
Rev. 2.4 12.06.2013



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