J110 Datasheet PDF - Micross

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J110
Micross

Part Number J110
Description Switching
Page 1 Pages

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J110
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J110
This n-channel JFET is optimised for low noise high
performance switching. The part is particularly suitable
for use in low noise audio amplifiers. The TO-92
package is well suited for cost sensitive applications
and mass production.
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX J110 
LOW ON RESISTANCE 
rDS(on) ≤ 18Ω 
FAST SWITCHING 
t(on) ≤ 4ns 
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) 
(See Packaging Information).
Maximum Temperatures 
J110 Benefits:
ƒ Low On Resistance
ƒ Low insertion loss
ƒ Low Noise
J110 Applications:
ƒ Analog Switches
ƒ Commutators
ƒ Choppers
Storage Temperature 
Operating Junction Temperature 
Maximum Power Dissipation 
Continuous Power Dissipation  
MAXIMUM CURRENT
Gate Current (Note 1) 
MAXIMUM VOLTAGES 
Gate to Drain Voltage 
Gate to Source Voltage 
55°C to +150°C 
55°C to +150°C 
350mW 
50mA 
VGDS = ‐25V 
VGSS = ‐25V 
  
J110 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN  TYP.  MAX  UNITS 
CONDITIONS 
BVGSS 
VGS(off) 
VGS(F) 
Gate to Source Breakdown Voltage 
Gate to Source Cutoff Voltage 
Gate to Source Forward Voltage 
25  ‐‐ 
0.5  ‐‐ 
‐‐  0.7 
‐‐   
4   
‐‐  V 
IG = 1µA,   VDS = 0V 
VDS = 5V, ID = 1µA 
IG = 1mA,   VDS = 0V 
IDSS  Drain to Source Saturation Current (Note 2)  10 
‐‐ 
‐‐ 
IGSS 
Gate Reverse Current 
‐‐  ‐0.01  ‐3 
IG 
Gate Operating Current 
‐‐  ‐0.01  ‐‐ 
mA 
 
nA 
VDS = 15V, VGS = 0V 
VGS = ‐15V,  VDS = 0V 
VDG = 10V,  ID = 10mA 
ID(off) 
Drain Cutoff Current 
‐‐   0.02  3 
VDS = 5V, VGS = ‐10V 
rDS(on) 
 
Drain to Source On Resistance 
 
‐‐  ‐‐ 
  
J110 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
Click Togfs 
Forward Transconductance 
‐‐  17 
18 
 
MAX 
‐‐ 
BuyΩ 
 
UNITS 
mS 
VGS = 0V,  VDS ≤ 0.1V 
 
CONDITIONS 
VDS = 5V,  ID = 10mA , f = 1kHz 
gos 
rDS(on) 
Output Conductance 
Drain to Source On Resistance 
‐‐  0.6  ‐‐ 
‐‐  ‐‐  18  Ω 
VGS = 0V, ID = 0A,  f = 1kHz 
Ciss 
Input Capacitance 
‐‐  60  85 
 
VDS = 0V, VGS = 0V, f = 1MHz 
Crss 
Reverse Transfer Capacitance 
‐‐  11  15  pF 
VDS = 0V, VGS = ‐10V, f = 1MHz 
en 
Equivalent Noise Voltage 
‐‐ 
3.5 
‐‐  nV/Hz 
VDS = 5V,  ID = 10mA , f = 1kHz 
 
 
    
 
J110 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
  UNITS 
CONDITIONS 
td(on) 
tr 
td(off) 
tf 
Turn On Time 
Turn On Rise Time 
Turn Off Time 
Turn Off Fall Time 
3   
1   
ns 
4 
18 
VDD = 1.5V 
VGS(H) = 0V 
 
See Switching Circuit 
Note 1 ‐ Absolute maximum ratings are limiting values above which J110 serviceabili t  y  m   a  y    b  e    i m   p  a  i r e  d  .     N  o   t e   2     P  u  l s  e   t e  s  t :   P  W      3  0  0    µ  s  ,  D  u  t  y  C  y  c  l e     3  %   
J110 SWITCHING CIRCUIT PARAMETERS                                                                                                                          
VGS(L) 
RL 
ID(on) 
 
5V 
150Ω 
10mA 
 
 
 
 
 
Available Packages:
J110 in TO-92
J110 in bare die.
TO-92 (Bottom View)
SWITCHING TEST CIRCUIT
Micros s Components E  urope  
    
    
Please contact Micross for full
package and die dimensions
    
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

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