IXYB82N120C3H1 Datasheet PDF - IXYS Corporation


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IXYB82N120C3H1
IXYS Corporation

Part Number IXYB82N120C3H1
Description High-Speed IGBT
Page 7 Pages

IXYB82N120C3H1 datasheet pdf
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1200V XPT TM IGBT
GenX3TM w/ Diode
IXYB82N120C3H1
High-Speed IGBT
for 20-50 kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
1200
1200
±20
±30
V
V
V
V
TC = 25°C (Chip Capability)
Lead Current Limit
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 125°C, RG = 2Ω
Clamped Inductive Load
TC = 25°C
164
160
82
42
320
41
800
ICM = 164
@VCE VCES
1040
-55 ... +150
150
-55 ... +150
A
A
A
A
A
A
mJ
A
W
°C
°C
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300 °C
260 °C
Mounting Force
30..120 / 6.7..27
N/lb.
10 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 82A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
50 μA
3 mA
±100 nA
2.75
3.50
3.20 V
V
VCES =
IC110 =
V CE(sat)
tfi(typ) =
1200V
82A
3.2V
93ns
PLUS264TM
G
C
E
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
z Optimized for Low Switching Losses
z Square RBSOA
z Anti-Parallel Ultra Fast Diode
z Positive Thermal Coefficient of
Vce(sat)
z Avalanche Rated
z High Current Handling Capability
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100355E(6/13)
http://www.Datasheet4U.com



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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 60A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 82A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 80A, VGE = 15V
VCE = 0.5 • VCES, RG = 2Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 125°C
IC = 80A, VGE = 15V
VCE = 0.5 • VCES, RG = 2Ω
Note 2
RthJC
RthCS
Characteristic Values
Min.
Typ. Max.
30 50
S
4060
285
110
pF
pF
pF
215 nC
26 nC
84 nC
29 ns
78 ns
4.95 mJ
192 280 ns
93 ns
2.78 5.00 mJ
29 ns
90 ns
7.45 mJ
200 ns
95 ns
3.70 mJ
0.12 °C/W
0.13 °C/W
IXYB82N120C3H1
PLUS264TM (IXYB) Outline
Pin 1 = Gate
Pin 2,4 = Collector
Pin 3 = Emitter
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VF IF = 60A, VGE = 0V, Note 1
IRM
trr
RthJC
IF = 60A, VGE = 0V,
-diF/dt = 700A/μs, VR = 600V
TJ = 125°C
TJ = 125°C
Characteristic Values
Min. Typ. Max.
2.7
1.9
41
V
V
A
420 ns
0.35 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



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IXYB82N120C3H1
160
140
120
100
80
60
40
20
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
13V
11V
10V
9V
8V
7V
6V
5V
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VCE - Volts
5
160
140
120
100
80
60
40
20
0
0
8.5
7.5
6.5
5.5
4.5
3.5
2.5
1.5
5
Fig. 3. Output Characteristics @ TJ = 125ºC
VGE = 15V
13V
11V
10V
9V
8V
7V
6V
1234
VCE - Volts
5V
56
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
TJ = 25ºC
I C = 164A
82A
41A
6 7 8 9 101 1 121 3 141 5
VGE - Volts
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
300
VGE = 15V
11V
13V
250 12V
10V
200 9V
150 8V
100
50
0
0
7V
6V
5V
5 10 15 20 25 30
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.2
2.0 VGE = 15V
1.8 I C = 164A
1.6
1.4
1.2 I C = 82A
1.0
0.8
I C = 41A
0.6
0.4
-50
-25
0 25 50 75 100
TJ - Degrees Centigrade
125
150
Fig. 6. Input Admittance
160
140
120
100
80
60
TJ = 125ºC
40 25ºC
- 40ºC
20
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
VGE - Volts
© 2013 IXYS CORPORATION, All Rights Reserved



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IXYB82N120C3H1
Fig. 7. Transconductance
80
TJ = - 40ºC
70
60
25ºC
50
125ºC
40
30
20
10
0
0 20 40 60 80 100 120 140 160
IC - Amperes
16
14
VCE = 600V
I C = 82A
12 I G = 10mA
Fig. 8. Gate Charge
10
8
6
4
2
0
0 20 40 60 80 100 120 140 160 180 200 220
QG - NanoCoulombs
10,000
Fig. 9. Capacitance
1,000
100
10
0
f = 1 MHz
5 10
15 20 25
VCE - Volts
Cies
Coes
Cres
30 35
40
Fig. 10. Reverse-Bias Safe Operating Area
180
160
140
120
100
80
60
40 TJ = 150ºC
RG = 2
20 dv / dt < 10V / ns
0
200 300 400 500 600 700 800 900 1000 1100 1200
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.01
0.1
1




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