IXTY3N60P Datasheet PDF - IXYS Corporation


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IXTY3N60P
IXYS Corporation

Part Number IXTY3N60P
Description N-Channel Enhancement Mode Avalanche Rated
Page 4 Pages

IXTY3N60P datasheet pdf
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PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA 3N60P
IXTP 3N60P
IXTY 3N60P
VDSS = 600
ID25 = 3.0
RDS(on) 2.9
V
A
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Weight
Test Conditions
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 M
Continuous
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/ µs, V DD VDSS
TJ 150° C, RG = 30
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
TO-220
TO-263
TO-252
Maximum Ratings
600 V
600 V
TO-263 (IXTA)
± 30
± 40
3.0
6
3
10
100
VG
VS
A
A TO-220 (IXTP)
A
mJ
mJ
(TAB)
5
70
-55 ... +150
150
-55 ... +150
300
260
4
3
0.35
V/ns
W
°C
°C
°C
°C
°C
g
g
g
GDS
TO-252 (IXTY)
G
S
G = Gate
S = Source
(TAB)
(TAB)
D = Drain
TAB = Drain
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 50 µA
IGSS VGS = ± 30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
RDS(on)
VGS = 10 V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
± 100 nA
5 µA
50 µA
2.9
Features
l International standard packages
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99449E(04/06)
http://www.Datasheet4U.com



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IXTA 3N60P IXTP 3N60P
IXTY 3N60P
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min. Typ. Max.
VDS= 20 V; ID = 0.5 ID25, Note 1
2.2 3.4
S
VGS = 0 V, VDS = 25 V, f = 1 MHz
411 pF
44 pF
6.4 pF
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 30 (External)
25 ns
25 ns
58 ns
22 ns
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
9.8 nC
3.4 nC
3.5 nC
(TO-220)
0.25
1.80° C/W
° CW
TO-220 (IXTP) Outline
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
TJ = 25° C unless otherwise specified)
Min. Typ. Max.
IS VGS = 0 V
3A
ISM Repetitive
9A
VSD IF = IS, VGS = 0 V, Note 1
1.5 V
trr IF = 3 A, -di/dt = 100 A/µs
VR = 100 V, VGS = 0 V
Note 1: Pulse test, t 300 µs, duty cycle d 2 %
500 ns
TO-252 (IXTY) Outline
TO-263 (IXTA) Outline
Pins: 1 - Gate
4 - Drain
3 - Source
Dim.
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
Millimeter
Min. Max.
2.19 2.38
0.89 1.14
0 0.13
0.64 0.89
0.76 1.14
5.21 5.46
0.46 0.58
0.46 0.58
5.97 6.22
4.32 5.21
6.35 6.73
4.32 5.21
2.28 BSC
4.57 BSC
9.40 10.42
0.51 1.02
0.64
0.89
2.54
1.02
1.27
2.92
Inches
Min. Max.
0.086 0.094
0.035 0.045
0 0.005
0.025 0.035
0.030 0.045
0.205 0.215
0.018 0.023
0.018 0.023
0.235 0.245
0.170 0.205
0.250 0.265
0.170 0.205
0.090 BSC
0.180 BSC
0.370 0.410
0.020 0.040
0.025
0.035
0.100
0.040
0.050
0.115
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
6,710,405B2 6,759,692
6,710,463
6771478 B2



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3
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
01
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
8V
7V
6V
23 456
78
VD S - Volts
9 10
3
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
0
Fig. 3. Output Characteristics
@ 125ºC
VGS = 10V
8V
7V
6V
5V
2 4 6 8 101 2 141 6 182 0
VD S - Volts
Fig. 5. RDS(on) No rm alized t o
0.5 ID25 Value vs. ID
3
2.8 VGS = 10V
2.6
TJ = 125º C
2.4
2.2
2
1.8
1.6
1.4
1.2 TJ = 25º C
1
0.8
01
2 34
I D - Amperes
56
© 2006 IXYS All rights reserved
IXTA 3N60P IXTP 3N60P
IXTY 3N60P
Fig. 2. Extended Output Characteristics
@ 25ºC
6
5.5 VGS = 10V
5 8V
4.5
4 7V
3.5
3
2.5
2
1.5 6V
1
0.5
0
0 3 6 9 12 15 18 21 24 27 30
VD S - Volts
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
3.1
2.8 VGS = 10V
2.5
2.2
1.9
1.6 ID = 3A
1.3 ID = 1. 5A
1
0.7
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Te m pe rature
3.3
3
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade



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4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
4
9
8
7
6
5
4
3
2
1
0
0.4
Fig. 7. Input Adm ittance
TJ =125º C
25º C
-40º C
4.5 55 .5 66 .5
VG S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
7
TJ = 125º C
TJ = 25º C
0.5 0.6 0.7 0.8 0.9
VS D - Volts
1000
Fig. 11. Capacitance
IXTA 3N60P IXTP 3N60P
IXTY 3N60P
Fig. 8. Transconductance
6
5.5
5
4.5
4
TJ = -40º C
25º C
125º C
3.5
3
2.5
2
1.5
1
0.5
0
0
0.511
.5 22 .5 33 .54
I D - A mperes
Fig. 10. Gate Charge
10
9 VDS = 300V
8 ID = 1. 5A
7 IG = 10mA
6
5
4
3
2
1
0
01
23 456
78
Q G - nanoCoulombs
9 10
Fig. 13. Maxim um Transient Therm al
Re s is tance
10.0
Ciss
100
Coss
10
f = 1MHz
Crss
1
0 5 10 15 20 25 30 35 40
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
1.0
0.1
0.1
1 10 100
Pulse Width - milliseconds
1000




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