IXTH152N085T Datasheet PDF - IXYS Corporation


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IXTH152N085T
IXYS Corporation

Part Number IXTH152N085T
Description N-Channel Enhancement Mode Avalanche Rated
Page 5 Pages

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Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTH152N085T
IXTQ152N085T
N-Channel Enhancement Mode
Avalanche Rated
VDSS =8 5
ID25 = 152
RDS(on) 7.0
V
A
mΩ
Symbol
VDSS
VDGR
VGSM
ID25
IIDLRMMS
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by T JM
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/μs, VDD VDSS
TJ 175°C, RG = 5 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
TO-3P
TO-247
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
© 2006 IXYS CORPORATION All rights reserved
Maximum Ratings
85
85
± 20
152
75
410
25
750
V
V
V
A
A
A
A
mJ
3 V/ns
360 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13 / 10 Nm/lb.in.
5.5 g
6g
Characteristic Values
Min. Typ. Max.
85 V
2.0 4.0 V
± 200 nA
5 μA
250 μA
5.5 7.0 mΩ
TO-247 (IXTH)
G
DS
TO-3P (IXTQ)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
DS99699 (11/06)
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Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs VDS= 10 V; ID = 60 A, Note 1
Ciss
Coss
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A
RG = 5 Ω (External)
Qg(on)
Qgs
Qgd
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
RthJC
RthCS
Source-Drain Diode
Symbol
Test Conditions
TJ = 25°C unless otherwise specified)
IS VGS = 0 V
ISM Pulse width limited by T JM
VSD IF = 25 A, VGS = 0 V, Note 1
trr IF = 25 A, -di/dt = 100 Aμ/ s
VR = 40 V, VGS = 0 V
IXTH152N085T
IXTQ152N085T
Characteristic Values
Min. Typ. Max.
60 100
S
5500
720
150
pF
pF
pF
30 ns
50 ns
50 ns
45 ns
114 nC
30 nC
35 nC
0.25
0.42 °C/W
°C/W
Characteristic Values
Min. Typ. Max.
152 A
410 A
1.0 V
90 ns
TO-247AD Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-3P (IXTQ) Outline
Notes: 1. Pulse test, t 300 μs, duty cycle d 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405B2 6,759,692 7,063,975 B2
6,710,463
6771478 B2 7,071,537



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Fig. 1. Output Characteristics
@ 25ºC
160
VGS = 10V
140 9V
8V
120 7V
100
6V
80
60
40
20
0
0
5V
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VDS - Volts
1
1.1
Fig. 3. Output Characteristics
@ 150ºC
160
VGS = 10V
140 9V
8V
7V
120
100 6V
80
60
40 5V
20
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 76A Value
vs. Drain Current
3
2.8
VGS = 10V
15V - - - -
2.6 TJ = 175ºC
2.4
2.2
2
1.8
1.6
1.4
1.2 TJ = 25ºC
1
0.8
0
50 100 150 200 250 300
ID - Amperes
© 2006 IXYS CORPORATION All rights reserved
IXTH152N085T
IXTQ152N085T
Fig. 2. Extended Output Characteristics
@ 25ºC
300
VGS = 10V
270 9V
8V
240
210
7V
180
150
120
90
60
30
0
0
6V
5V
1 23
45
VDS - Volts
6 78
Fig. 4. RDS(on) Normalized to ID = 7 6A Value
vs. Junction Temperature
2.6
2.4 VGS = 10V
2.2
2.0
1.8
I D = 152A
1.6 I D = 76A
1.4
1.2
1.0
0.8
0.6
-50
-25
0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case Temperature
140
External Lead Current Limit for TO-263 (7-Lead)
120
100
80
External Lead Current Limit for TO-3P, TO-220, & TO-263
60
40
20
0
-50
-25
0 25 50 75 100 125 150 175
TC - Degrees Centigrade



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IXTH152N085T
IXTQ152N085T
270
240
210
180
150
120
90
60
30
0
3.5
280
Fig. 7. Input Admittance
TJ = -40ºC
25ºC
150ºC
4 4.5 5 5.5 6 6.5
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
7
240
200
160
TJ = 150ºC
120
TJ = 25ºC
80
40
0
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
VSD - Volts
10,000
f = 1 MHz
Fig. 11. Capacitance
Ciss
140
120
100
80
60
40
20
0
0
Fig. 8. Transconductance
TJ = - 40ºC
25ºC
150ºC
40 80 120 160 200 240
ID - Amperes
Fig. 10. Gate Charge
10
9 VDS = 43V
I D = 25A
8
I G = 10mA
7
6
5
4
3
2
1
0
0 10 203 04 0 506 07 0 809 0 100 110 120
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
1.00
1,000
Coss
0.10
Crss
100
0
5 10 15 20 25 30 35 40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
0.01
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10




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