IXGQ90N33TC Datasheet PDF - IXYS Corporation


www.Datasheet-PDF.com

IXGQ90N33TC
IXYS Corporation

Part Number IXGQ90N33TC
Description IGBTs
Page 5 Pages

IXGQ90N33TC datasheet pdf
View PDF for PC
IXGQ90N33TC pdf
View PDF for Mobile


No Preview Available !

Trench Gate,
High Speed,
IGBTs
For PDP Applications
IXGA90N33TC
IXGQ90N33TC
IXGQ90N33TCD1
IVCCPES
VCE(sat)
=
=
330V
360A
1.80V
90N33TC 90N33TCD1
Symbol
VCES
VGES
VGEM
IC25
IC(RMS)
IICC1P10
ICP
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
Continuous
Transient
TLeC=ad25C°uCrr(eCnht iLpimCiat pability)
TTCC
= 110°C
< 150°C, tp < 10μs
TC < 150°C, tp < 10μs, Duty cycle < 1%
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-3P)
TO-263
TO-3P
Maximum Ratings
330
±20
±30
90
75
38
60
360
V
V
V
A
A
A
A
A
200
-55 ... +150
150
-55 ... +150
300
260
1.13/10
2.5
5.5
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
VGE = 15V, IC = 20A, Note 1
IC = 45A
TJ = 125°C
IC = 90A
TJ = 125°C
Characteristic Values
Min. Typ. Max.
330 V
3.0 5.0 V
1 μA
200 μA
±200 nA
1.54
1.54
1.82
1.95
1.40 V
1.80 V
V
V
V
TO-263 AA (IXGA)
G
E
C (Tab)
TO-3P (IXGQ)
G
C
E
G = Gate
E = Emitter
C (Tab)
C = Collector
Tab = Collector
Features
Low VCE(sat)
- for minimum On-State Conduction
Losses
Fast Switching
Applications
PDP Screen Drivers
© 2011 IXYS CORPORATION, All Rights Reserved
DS99754B (07/11)



No Preview Available !

IXGQ90N33TCD1 IXGA90N33TC
IXGQ90N33TC
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
gfS
Cies
Coes
Cres
IC = 45A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
40 65
2320
180
21
S
pF
pF
pF
Qg
Qge IC = 45A, VGE = 15V, VCE = 0.5 VCES
69 nC
15 nC
Qgc 13 nC
td(on)
tr
td(off)
tf
Resistive Switching Times, TJ = 25°C
IC = 45A, VGE = 15V
VCE = 240V, RG = 5Ω
13
30
38
49
ns
ns
ns
ns
td(on)
tr
td(off)
tf
Resistive Switching Times, TJ = 125°C
IC = 45A, VGE = 15V
VCE = 240V, RG = 5Ω
13
28
50
74
ns
ns
ns
ns
RthJC
RthCS
TO-3P
0.62 °C/W
0.21 °C/W
TO-263 Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.06
0.51
1.14
4.83
0.99
1.40
0.40
1.14
0.74
1.40
8.64
8.00
9.65
8.89
9.65 10.41
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
Inches
Min. Max.
.160
.020
.045
.190
.039
.055
.016 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270
.100
.575
.090
.040
.050
0
.320
BSC
.625
.110
.055
.070
.005
Reverse Diode
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VF IF = 20A, VGE = 0V, Note 1
RthJC
Characteristic Values
Min.
Typ.
Max
2.0 V
2.5 °C/W
TO-3P Outline
Note:
1. Pulse test, t 300μs, duty cycle, d 2%.
1 = Gate
3 = Emitter
2,4 = Collector
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



No Preview Available !

Fig. 1. Output Characteristics
@ 25ºC
90
VGE = 15V
80 13V
11V
70 9V
60
50
7V
40
30
20
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
VCE - Volts
Fig. 3. Output Characteristics
@ 125ºC
90
VGE = 15V
80 13V
11V
70 9V
60
50
40 7V
30
20
10 5V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
VCE - Volts
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
5
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
TJ = 25ºC
I C = 90A
45A
23A
6 7 8 9 10 11 12 13 14 15
VGE - Volts
© 2011 IXYS CORPORATION, All Rights Reserved
IXGQ90N33TCD1 IXGA90N33TC
IXGQ90N33TC
Fig. 2. Extended Output Characteristics
@ 25ºC
300
270
VGE = 15V
240 13V
11V
210
180
9V
150
120
90
60 7V
30
0
0 12 34 5 67 89
VCE - Volts
10
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
1.4
VGE = 15V
1.3
I C = 90A
1.2
1.1
I C = 45A
1
0.9
I C = 23A
0.8
0.7
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Input Admittance
140
120
100
TJ = 125ºC
80 25ºC
- 40ºC
60
40
20
0
4 4.5 5 5.5 6 6.5 7 7.5
VGE - Volts



No Preview Available !

IXGQ90N33TCD1 IXGA90N33TC
IXGQ90N33TC
90
80
70
60
50
40
30
20
10
0
0
Fig. 7. Transconductance
TJ = - 40ºC
25ºC
125ºC
20 40 60 80 100 120 140
IC - Amperes
Fig. 8. Gate Charge
16
14 VCE = 165V
I C = 45A
12 I G = 10 mA
10
8
6
4
2
0
0 10 20 30 40 50 60 70
QG - NanoCoulombs
Fig. 9. Reverse-Bias Safe Operating Area
100
90
80
70
60
50
40
30
TJ = 150ºC
20 RG = 20Ω
10 dV / dT < 10V / ns
0
50
100 150 200 250 300 350
VCE - Volts
1000
Fig. 11. Forward-Bias Safe Operating Area
VCE(sat) Limit
10,000
f = 1 MHz
1,000
Fig. 10. Capacitance
Cies
100
10
0
1.00
Coes
Cres
5 10 15 20 25 30 35
VCE - Volts
Fig. 12. Maximum Transient Thermal
Impedance
40
100
1µs
10µs
0.10
10
TJ = 150ºC
TC = 25ºC
Single Pulse
100µs
1ms
1
1
10
100
1000
IXYS Reserves the Right to ChanVgCeE L-iVmoitlsts, Test Conditions, and Dimensions.
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10




IXGQ90N33TC datasheet pdf
Download PDF
IXGQ90N33TC pdf
View PDF for Mobile


Similiar Datasheets : IXGQ90N33TC IXGQ90N33TCD1

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact