IXGH60N60C3 Datasheet PDF - IXYS Corporation

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IXGH60N60C3
IXYS Corporation

Part Number IXGH60N60C3
Description High Speed PT IGBT
Page 6 Pages


IXGH60N60C3 datasheet pdf
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GenX3TM 600V
IGBT
High Speed PT IGBT for
40-100kHz Switching
IXGH60N60C3
VCES =
IC110 =
V CE(sat)
tfi (typ) =
600V
60A
2.5V
50ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (Limited by Leads)
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE= 15V, TVJ = 125°C, RG = 3Ω
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
600
600
±20
±30
V
V
V
V
75
60
360
40
400
ICM = 125
VCE VCES
380
-55 ... +150
150
-55 ... +150
300
260
1.13/10
6
A
A
A
A
mJ
A
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE= 0V
IGES
VCE(sat)
VCE = 0V, VGE = ±20V
IC = 40A, VGE = 15V
TJ = 125°C
TJ = 125°C
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
50 μA
1 mA
±100 nA
2.2 2.5 V
1.7 V
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
z Optimized for Low Switching Losses
z Square RBSOA
z Avalanche rated
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2010 IXYS CORPORATION, All Rights Reserved
DS99928B(01/10)



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Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs IC = 40A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge IC = 40A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 25°C
IC = 40A, VGE = 15V
VCE = 480V, RG = 3Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 125°C
IC = 40A, VGE = 15V
VCE = 480V, RG = 3Ω
Note 2
RthJC
RthCK
Characteristic Values
Min.
Typ.
Max.
23 38
S
2810
210
80
pF
pF
pF
115 nC
22 nC
43 nC
21 ns
33 ns
0.80 mJ
70 110 ns
50 ns
0.45 0.80 mJ
21 ns
33 ns
1.25 mJ
112 ns
86 ns
0.80 mJ
0.33 °C/W
0.21 °C/W
IXGH60N60C3
TO-247 (IXGH) Outline
123
P
e
Terminals: 1 - Gate
2 - Collector
3 - Emitted Tab - Collector
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



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IXGH60N60C3
80
70
60
50
40
30
20
10
0
0.0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
13V
11V
9V
7V
5V
0.4 0.8 1.2 1.6 2.0 2.4 2.8
VCE - Volts
3.2
80
70
60
50
40
30
20
10
0
0.0
Fig. 3. Output Characteristics @ TJ = 125ºC
VGE = 15V
13V
11V
9V
7V
5V
0.4 0.8 1.2 1.6 2.0 2.4 2.8
VCE - Volts
3.2
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
6
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
TJ = 25ºC
I C = 80A
40A
20A
7 8 9 10 11 12 13 14 15
VGE - Volts
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
300
VGE = 15V
13V
250
11V
200
150
9V
100
50
0
0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
25
7V
5V
2 4 6 8 10 12 14
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
VGE = 15V
I C = 80A
16
I C = 40A
I C = 20A
50 75 100 125
TJ - Degrees Centigrade
150
Fig. 6. Input Admittance
160
140
120
100
80
TJ = 125ºC
25ºC
- 40ºC
60
40
20
0
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
VGE - Volts
© 2010 IXYS CORPORATION, All Rights Reserved



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IXGH60N60C3
Fig. 7. Transconductance
70
TJ = - 40ºC
60
50 25ºC
40 125ºC
30
20
10
0
0 20 40 60 80 100 120 140 160
IC - Amperes
16
14
VCE = 300V
I C = 40A
12 I G = 10 mA
Fig. 8. Gate Charge
10
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100 110 120
QG - NanoCoulombs
10,000
Fig. 9. Capacitance
1,000
Cies
Coes
100
f = 1 MHz
Cres
10
0
5 10 15 20 25 30 35 40
VCE - Volts
Fig. 10. Reverse-Bias Safe Operating Area
140
120
100
80
60
40 TJ = 125ºC
RG = 3
20 dv / dt < 10V / ns
0
100 150 200 250 300 350 400 450 500 550 600
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.



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