IXFT74N20 Datasheet PDF - IXYS Corporation

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IXFT74N20
IXYS Corporation

Part Number IXFT74N20
Description HIPERFET POWER MOSFETs
Page 2 Pages


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HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
IXFH/IXFT 68N20
IXFH/IXFT 74N20
VDSS ID25 RDS(on)
200 V 68 A 35 mW
200 V 74 A 30 mW
trr £ 200 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
I DSS
RDS(on)
Test Conditions
Maximum Ratings TO-247 AD (IXFH)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
200 V
200 V
±20 V
±30 V
68N20
74N20
68N20
74N20
68N20
74N20
68
74
272
296
68
74
A
A
A
A
A
A
45 mJ
5 V/ns
360 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS= 10 V, ID = 0.5 ID25
74N20
68N20
Pulse test, t £ 300 ms, duty cycle d £ 2 %
200
2
V
4V
±100 nA
200 mA
1 mA
30 m W
35 m W
(TAB)
TO-268 (D3) ( IXFT)
G
S
G = Gate,
S = Source,
D = Drain,
TAB = Drain
(TAB)
Features
• International standard packages
•
•
Low RDS
Rugged
(on) HDMOSTM process
polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• High power surface package
• High power density
© 2000 IXYS All rights reserved
97522C (8/00)
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IXFH 68N20 IXFH 74N20
IXFT 68N20 IXFT 74N20
Symbol Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs VDS = 10 V; ID = 0.5 ID25, pulse test
Ciss
Coss
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 2 W (External)
Qg(on)
Qgs
Qgd
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RthJC
RthCK
(TO-247 Package)
Characteristic Values
Min. Typ.
Max.
35 45
S
5400
1160
560
pF
pF
pF
40 ns
55 ns
120 ns
26 ns
280 nC
39 nC
135 nC
0.35 K/W
0.25
K/W
IXFH68N20 & IXFH74N80 characteristic curves can be found in the IXFK72N20/
IXFK80N20 data sheet.
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
IS VGS = 0 V
68N20
74N20
ISM Repetitive;
68N20
pulse width limited by TJM 74N20
VSD IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
QRM
IF = 25A
-di/dt = 100 A/ms,
IRM VR = 100 V
68 A
74 A
272 A
296 A
1.5 V
200 ns
0.85
8
mC
A
TO-247 AD (IXFH) Outline
123
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
ÆP 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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IXFT74N20 HIPERFET POWER MOSFETs IXFT74N20
IXYS Corporation
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