IXFT60N20F Datasheet PDF - IXYS Corporation


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IXFT60N20F
IXYS Corporation

Part Number IXFT60N20F
Description HiPerRFTM Power MOSFETs
Page 2 Pages

IXFT60N20F datasheet pdf
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Advance Technical Information
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HiPerRFTM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
IXFH 60N20F
IXFT 60N20F
VDSS = 200V
I = 60A
D25
RDS(on) = 38m
t
rr
200
ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
P
D
TJ
T
JM
Tstg
T
L
Md
Weight
Symbol
V
DSS
VGS(th)
IGSS
IDSS
RDS(on)
TO-247 AD (IXFH)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-247
TO-247
TO-268
Maximum Ratings
200 V
200 V
±20 V
±30 V
60 A
240 A
60 A
35 mJ
1.5 J
10 V/ns
315 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 ° C
1.13/10 Nm/lb.in.
6g
4g
Test Conditions
V = 0 V, I = 1mA
GS D
VDS = VGS, ID = 4mA
VGS = ±20 V, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
200 V
2.0 4.0 V
±100 nA
TJ = 125°C
50 µA
1.5 mA
38 m
(TAB)
TO-268 (IXFT) Case Style
G
S
G = Gate,
S = Source,
D = Drain,
TAB = Drain
(TAB)
Features
l RF capable MOSFETs
l Double metal process for low gate
resistance
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
l Fast intrinsic rectifier
Applications
l DC-DC converters
l Switched-mode and resonant-mode
power supplies, >500kHz switching
l DC choppers
l 13.5 MHz industrial applications
l Pulse generation
l Laser drivers
l RF amplifiers
Advantages
l Space savings
l High power density
© 2002 IXYS All rights reserved
98885 (1/02)



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Symbol
gfs
Ciss
Coss
Crss
t
d(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 ID25 Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
18 26
2930
940
320
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 2.0 (External)
15
14
42
7.0
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
100
25
46
nC
nC
nC
(TO-247)
0.39 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive;
pulse width limited by TJM
VSD IF = IS, VGS = 0 V, Note 1
trr
QRM IF = 25A,-di/dt = 100 A/µs, VR = 100 V
I
RM
60 A
240 A
1.5 V
200 ns
0.8 µ C
10 A
IXFH 60N20F
IXwFwTw.Da6ta0SNhe2et04UF.com
TO-247 AD Outline
123
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Note: 1. Pulse test, t 300 µs, duty cycle d 2 %
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC
.010 BSC
L4 3.80 4.10 .150 .161
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025




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