IXFM7N80 Datasheet PDF - IXYS Corporation

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IXFM7N80
IXYS Corporation

Part Number IXFM7N80
Description HiPerFET Power MOSFETs
Page 4 Pages


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HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
IXFH 7 N80
IXFM 7 N80
VDSS
ID (cont)
RDS(on)
trr
= 800 V
=7A
= 1.4 W
= 250 ns
Symbol
VDSS
V
DGR
VGS
VGSM
ID25
IDM
I
AR
EAR
dv/dt
PD
T
J
TJM
T
stg
TL
Md
Weight
Symbol
VDSS
V
GS(th)
I
GSS
IDSS
R
DS(on)
Test Conditions
Maximum Ratings TO-247 AD (IXFH)
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
800 V
800 V
±20 V
±30 V
7A
28 A
7A
18 mJ
5 V/ns
180 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
TO-204 AA (IXFM)
(TAB)
G = Gate,
S = Source,
G
D
D = Drain,
TAB = Drain
Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3 mA
V = V , I = 2.5 mA
DS GS D
V
GS
=
±20
V,
DC
V
DS
=
0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
V = 10 V, I = 0.5 • I
GS D D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
800
2
V
4.5 V
±100 nA
250 mA
1 mA
1.4 W
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91527F(7/97)
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IXFH 7N80
IXFM 7N80
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
46
2800
250
100
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 4.7 W (External)
35 100
40 110
100 200
60 100
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
110 130
15 30
50 70
nC
nC
nC
0.7 K/W
0.25 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive; pulse width limited by TJM
VSD IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr TJ = 25°C
T=
J
125°C
QRM
IF = IS
-di/dt = 100 A/ms,
TJ = 25°C
VR = 100 V
TJ = 125°C
IRM TJ = 25°C
TJ = 125°C
7A
28 A
1.5 V
250 ns
400 ns
0.5 mC
1.0 mC
7.5 A
9.0 A
TO-247 AD (IXFH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-204 AA (IXFM) Outline
Dim. Millimeter
Min. Max.
A 38.61 39.12
B 19.43 19.94
C 6.40 9.14
D 0.97 1.09
E 1.53 2.92
F 30.15 BSC
G 10.67 11.17
H 5.21 5.71
J 16.64 17.14
K 11.18 12.19
Q 3.84 4.19
R 25.16 25.90
Inches
Min. Max.
1.520 1.540
- 0.785
0.252 0.360
0.038 0.043
0.060 0.115
1.187 BSC
0.420 0.440
0.205 0.225
0.655 0.675
0.440 0.480
0.151 0.165
0.991 1.020
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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Fig. 1 Output Characteristics
9
TJ = 25°C
8
7
6
5
4
3
2
1
0
0 5 10
VGS = 10V
15 20
6V
5V
25 30
VDS - Volts
Fig. 3 RDS(on) vs. Drain Current
3.0
TJ = 25°C
2.8
2.6
2.4
VGS= 10V
2.2
VGS= 15V
2.0
1.8
0 2 4 6 8 10
ID - Amperes
Fig. 5 Drain Current vs.
Case Temperature
8
7
6
7N80
5
4
3
2
1
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
© 2000 IXYS All rights reserved
IXFH 7N80
IXFM 7N80
Fig. 2 Input Admittance
9
8 TJ = 25°C
7
6
5
4
3
2
1
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
VGS - Volts
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.50
2.25
2.00
1.75
1.50
ID = 3.5A
1.25
1.00
0.75
0.50
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
1.1
VGS(th)
BVDSS
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
3-4
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Fig.7 Gate Charge Characteristic Curve
10
9 VDS = 500V
8
ID = 3.5A
IG = 10mA
7
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80
Gate Charge - nCoulombs
Fig.9 Capacitance Curves
2750
2500
2250
2000
1750
1500
1250
1000
750
500
250
0
0
Ciss
f = 1MHz
VDS = 25V
Coss
Crss
5 10
15
VCE - Volts
20
25
IXFH 7N80
IXFM 7N80
Fig.8 Forward Bias Safe Operating Area
10 Limited by RDS(on)
10µs
100µs
1ms
1
10ms
100ms
0.1
1
10 100
VDS - Volts
1000
Fig.10 Source Current vs. Source
to Drain Voltage
9
8
7
6
5
4
TJ = 125°C
3
2 TJ = 25°C
1
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1.4
VDS - Volts
Fig.11 Transient Thermal Impedance
1
D=0.5
0.1 D=0.2
D=0.1
D=0.05
D=0.02
0.01 D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
© 2000 IXYS All rights reserved
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IXFM7N80 HiPerFET Power MOSFETs IXFM7N80
IXYS Corporation
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