IXFK90N20 Datasheet PDF - IXYS Corporation


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IXFK90N20
IXYS Corporation

Part Number IXFK90N20
Description HiPerFET Power MOSFETs
Page 4 Pages

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HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Symbol
Test Conditions
VDSS
VDGR
VGS
VGSM
ID25
I
D80
I
DM
I
AR
EAR
dv/dt
PD
T
J
TJM
Tstg
TL
VISOL
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C, Chip capability
T
C
= 80°C, limited by external leads
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS t = 1 min
I
ISOL
£
1
mA
t=1s
Mounting torque
Terminal connection torque
IXFK 90 N 20
IXFN 100 N 20
IXFN 106 N 20
Maximum Ratings
IXFK
IXFN IXFN
90N20 100N20 106N20
200 200 200 V
200 200 200 V
±20 ±20 20 V
±30 ±30 20 V
90 
76
360
50
100 106 A
-A
400 424 A
50 A
30 30 30 mJ
5 5 5 V/ns
500 520 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 - °C
- 2500
- 3000
V~
V~
0.9/6
-
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
10 30 g
Symbol
VDSS
VGH(th)
IGSS
IDSS
R
DS(on)
Test Conditions
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 8 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
V = 10 V, I = 0.5 • I
GS D D25
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
200
2
TJ = 25°C
TJ = 125°C
V
4V
±200 nA
400 mA
2 mA
IXFK90N20
IXFN100N20
IXFN106N20
0.023
0.023
0.020
W
W
W
V
DSS
I
D25
200 V 90 A
200 V 100 A
200 V 106 A
trr £ 200 ns
TO-264 AA
TO-264 AA (IXFK)
R
DS(on)
23 mW
23 mW
20 mW
G
D
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
DG
(TAB)
G
S
S
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
l International standard packages
q JEDEC TO-264 AA, epoxy meet
UL94V-0, flammability classification
q miniBLOC with Aluminium nitride
isolation
q Low R HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Unclamped Inductive Switching (UIS)
rated
q Low package inductance
q Fast intrinsic Rectifier
Applications
q DC-DC converters
q Synchronous rectification
q Battery chargers
q Switched-mode and resonant-mode
power supplies
q DC choppers
q Temperature and lighting controls
q Low voltage relays
Advantages
q Easy to mount
q Space savings
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92804H (7/97)
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IXFK100N20
IXFN90N20 IXFN106N20
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Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 W (External),
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
TO-264 AA
TO-264 AA
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
60 S
9000
1600
590
pF
pF
pF
30 ns
80 ns
75 ns
30 ns
380 nC
70 nC
190 nC
0.25 K/W
0.15 K/W
0.24 K/W
0.05 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
IXFK90N20
IXFN100N20
IXFN106N20
IXFK90N20
ISM Repetitive;
IXFN100N20
pulse width limited by TJM IXFN106N20
V I = 100 A, V = 0 V,
SD F GS
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
QRM IF = 50 A, -di/dt = 100 A/ms, VR = 100 V
IRM
90 A
100 A
106 A
360 A
424 A
1.5 V
200 ns
3 mC
38 A
TO-264 AA Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.202
.114
.083
.044
.094
.114
.056
.106
.122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800
.090
.820
.102
.125 .144
.239
.330
.247
.342
.150
.070
.170
.090
.238 .248
.062 .072
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min. Max.
31.50 31.88
7.80 8.20
4.09 4.29
4.09 4.29
4.09 4.29
14.91 15.11
30.12 30.30
38.00 38.23
11.68 12.22
8.92 9.60
0.76 0.84
12.60 12.85
25.15 25.42
1.98 2.13
4.95 5.97
26.54 26.90
3.94 4.42
4.72 4.85
24.59 25.07
-0.05 0.1
Inches
Min. Max.
1.240 1.255
0.307 0.323
0.161 0.169
0.161 0.169
0.161 0.169
0.587 0.595
1.186 1.193
1.496 1.505
0.460 0.481
0.351 0.378
0.030 0.033
0.496 0.506
0.990 1.001
0.078 0.084
0.195 0.235
1.045 1.059
0.155 0.174
0.186 0.191
0.968 0.987
-0.002 0.004
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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Fig. 1 Output Characteristics
200
180
160 TJ = 25°C
VGS = 10V
9V
8V
7V
140
120
6V
100
80
60
40 5V
20
0
0 1 2 3 4 5 6 7 8 9 10
VDS - Volts
Fig. 2 Input Admittance
200
180
160
140
120 TJ = 25°C
100
80
60
40
20
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
2.6
TJ = 25°C
2.4
2.2
2.0
1.8
VGS = 10V
1.6
1.4
1.2
VGS = 15V
1.0
0.8
0
50 100 150 200 250 300
350
ID - Amperes
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.50
2.25
2.00
1.75
1.50
ID = 53A
1.25
1.00
0.75
0.50
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 5 Drain Current vs.
Case Temperature
120
106N20
100
80 90N20
60
40
20
0
-50 -25
0 25 50 75 100 125 150
TC - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
VGS(th)
1.1
BVDSS
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
© 2000 IXYS All rights reserved
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IXFK100N20
IXFN90N20 IXFN106N20
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Fig.7 Gate Charge Characteristic Curve
14
VDS = 100V
12 ID = 50A
10 IG = 10mA
8
6
4
2
0
0 50 100 150 200 250 300 350 400
Gate Charge - nCoulombs
Fig.8 Capacitance Curves
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
0
Ciss
f = 1MHz
VDS = 25V
Coss
Crss
5 10 15 20
VDS - Volts
25
Fig.9 Source Current vs. Source
to Drain Voltage
100
80
60
TJ = 125°C
40
TJ = 25°C
20
0
0.4 0.6 0.8 1.0 1.2
VSD - Volts
Fig.10 Transient Thermal Impedance
0.5
0.1
0.01
0.001
0.01
Pulse Width - Seconds
0.1
© 2000 IXYS All rights reserved
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