IXFH76N06-11 Datasheet PDF - IXYS Corporation

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IXFH76N06-11
IXYS Corporation

Part Number IXFH76N06-11
Description HiPerFET Power MOSFETs
Page 4 Pages


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HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
IXFH 76 N06-11
IXFH 76 N06-12
IXFH 76 N07-11
IXFH 76 N07-12
V
DSS
60 V
60 V
70 V
70 V
I
D25
76 A
76 A
76 A
76 A
R
DS(on)
11 mW
12 mW
11 mW
12 mW
Preliminary data sheet
Symbol
VDSS
VDGR
VGS
VGSM
I
D25
ID119
IDM
IAR
EAR
E
AS
dv/dt
PD
TJ
TJM
T
stg
TL
Md
Weight
Symbol
V
DSS
V
GS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 10 kW
Continuous
Transient
T
C
= 25°C (Chip capability = 125 A)
TC = 119°C, limited by external leads
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Maximum Ratings
N06 60 V
N07 70 V
N06 60 V
N07 70 V
±20 V
±30 V
76 A
76 A
304 A
100 A
30 mJ
2J
5 V/ns
360 W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300 °C
1.15/10 Nm/lb.in.
6g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
GS
=
0
V,
I
D
=
250
mA
N06
N07
V = V , I = 4 mA
DS GS D
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 40 A
76N06/N07-11
76N06/N07-12
Pulse test, t £ 300 ms, duty cycle d £ 2 %
60
70
2.0
V
V
3.4 V
±100 nA
100 mA
500 mA
11 mW
12 mW
TO-247 AD
(TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
q International standard package
JEDEC TO-247 AD
q Low R HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Unclamped Inductive Switching (UIS)
rated
q Low package inductance
- easy to drive and to protect
q Fast intrinsic Rectifier
Applications
q DC-DC converters
q Synchronous rectification
q Battery chargers
q Switched-mode and resonant-mode
power supplies
q DC choppers
q Temperature and lighting controls
q Low voltage relays
Advantages
q Easy to mount with 1 screw
(isolated mounting screw hole)
q Space savings
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92785H (12/98)
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IXFH 76 N06-11
IXFH 76 N06-12
IXFH 76 N07-11
IXFH 76 N07-12
Symbol
gfs
Ciss
Coss
C
rss
t
d(on)
tr
t
d(off)
tf
Q
g(on)
Qgs
Q
gd
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 40 A, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
30 40
4400
2000
1200
S
pF
pF
pF
VGS = 10 V, VDS = 50 V, ID = 30 A
R
G
=
1
W
(External)
40 ns
70 ns
130 ns
55 ns
240 nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 40 A
30 nC
120 nC
0.42 K/W
0.25 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive; pulse width limited by TJM
VSD IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr IF = 25 A, -di/dt = 100 A/ms, TJ = 25°C
VR = 25 V
TJ = 125°C
76 A
304 A
1.5 V
150 ns
250 ns
TO-247 AD (IXFH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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IXFH 76 N06-11
IXFH 76 N06-12
IXFH 76 N07-11
IXFH 76 N07-12
Fig.1 Output Characteristics
100
90
TJ = 25°C
VGS=10V
9V
80 8V
70
60
50
40
30
20
10
0
0.0 0.5 1.0
7V
6V
1.5
VDS - Volts
5V
2.0
Fig. 3 Rds(on) vs. Drain Current
1.4
TJ = 25°C
1.3
1.2
VGS = 10V
1.1
1.0
VGS = 15V
0.9
0.8
0
50 100 150 200 250 300
ID - Amperes
Fig. 5 ID vs. Case Temperature
90
80
70
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
Case Temperature - °C
Fig. 2 Input Admittance
300
250
TJ=25°C
200
TJ=150°C
150
TJ=100°C
100
50
0
2 4 6 8 10
VGS - Volts
12
Fig. 4 RDS(ON) Temperature Dependence
2.25
2.00
1.75
ID = 38A
VGS = 10V
1.50
1.25
1.00
0.75
0.50
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees C
Fig. 6 Transconductance
80
VGS=10V
70
TJ = 25°C
60
TJ = 100°C
50
40 TJ = 150°C
30
20
10
0
0 50 100 150 200 250
ID - Amperes
300
© 2000 IXYS All rights reserved
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IXFH 76 N06-11
IXFH 76 N06-12
IXFH 76 N07-11
IXFH 76 N07-12
Fig. 7 Gate Charge
16
14 VDS = 40V
12
ID = 38A
IG = 1mA
10
8
6
4
2
0
0 50 100 150 200 250 300 350
Gate Charge - nCoulombs
Fig. 9 Capacitance Curves
6000
5000
4000
f = 1MHz
Ciss
3000
2000
1000
Coss
Crss
0
0 10 20 30 40
VDS - Volts
Fig. 11 Transient Thermal Impedance
Fig. 8 Forward Bias Safe Operating Area
1000
Limited by Rds(on)
100
10ms
100ms
1ms
10
TC = 25°C
1
1
10
VDS - Volts
10ms
100ms
DC
100
Fig. 10 Source Current vs.
Source to Drain Voltage
200
TJ =150°C
150
100
50
0
0.0
TJ =150°C
TJ =25°C
TJ =100°C
0.5 1.0 1.5
VSD - Volts
2.0
D=0.5
0.100
D=0.2
D=0.1
D=0.05
D=0.02
0.010
D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
© 2000 IXYS All rights reserved
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IXFH76N06-11 datasheet pdf
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IXFH76N06-11 HiPerFET Power MOSFETs IXFH76N06-11
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