IXFH74N20P Datasheet PDF - IXYS Corporation

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IXFH74N20P
IXYS Corporation

Part Number IXFH74N20P
Description PolarHT HiPerFET Power MOSFET
Page 5 Pages


IXFH74N20P datasheet pdf
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PolarHTTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode, Avalanche
Rated
Preliminary Data Sheet
IXFH 74N20P
IXFV 74N20P
IXFV 74N20PS
www.DataSheet4U.com
VDSS =
ID25 =
=RDS(on)
trr
200 V
74 A
34 m
200 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
FC
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting Force (PLUS220)
Mounting torque (TO-247)
TO-247
PLUS220
Maximum Ratings
200 V
200 V
TO-247 (IXFH)
±20 V
±30 V
74 A G
200 A
D
S
60 A
40 mJ PLUS220 (IXFV)
1.0 J
D (TAB)
10 V/ns
480 W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300 °C
250 °C
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
6.0 g
4.0 g
G
DS
PLUS220SMD (IXFV-PS)
D (TAB)
G
G = Gate
S = Source
S
D = Drain
TAB = Drain
D (TAB)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
200 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
34 m
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99209(09/04)



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IXFH 74N20P IXFV 74N20P
IXFV 74N20PS
www.DataSheet4U.com
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise specified)
Typ. Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
30 44
3300
800
190
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 4 (External)
23 ns
21 ns
60 ns
21 ns
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
107 nC
24 nC
52 nC
(TO-247, PLUS220)
0.21
0.31 K/W
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. typ. Max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
74 A
180 A
1.5 V
trr IF = 25 A, -di/dt = 100 A/µs
QRM VR = 100 V
IRM
120 200 ns
0.4 µC
6A
TO-247 (IXFH) Outline
123
Terminals: 1 - Gate
2 - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
PLUS220 (IXFV) Outline
E
E1
L2
A
A1
E1
D
L3
L1
D1
PLUS220SMD (IXFV-PS) Outline
E
E1
A
L2 A1
E1
D
L3
L
L1
2X b
e
c
A2
A3
L4
Terminals: 1-Gate 2-Drain
A
A1
A2
A3
b
c
D
D1
E
E1
e
L
L1
L2
L3
L4
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
L
2X e
3X b
c
A2
Terminals: 1-Gate 2-Drain
A
A1
A2
b
c
D
D1
E
E1
e
L
L1
L2
L3
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585



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80
70
60
50
40
30
20
10
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
9V
8V
7V
6V
5V
0.5 1 1.5 2 2.5 3
VD S - Volts
3.5
80
70
60
50
40
30
20
10
0
0
Fig. 3. Output Characteristics
@ 150ºC
VGS = 10V
9V
8V
7V
6V
5V
123456
VD S - Volts
7
Fig. 5. RDS(on) Norm alize d to
0.5 ID25 Value vs. ID
5
4.5 VGS = 10V
4
TJ = 175ºC
3.5
3
2.5
2
VGS = 15V
1.5
VGS = 10V
1
0.5
0
TJ = 25ºC
20 40 60 80 100 120 140 160 180 200
I D - Amperes
© 2004 IXYS All rights reserved
IXFH 74N20P IXFV 74N20P
IXFV 74N20PS
www.DataSheet4U.com
Fig. 2. Extended Output Characteristics
@ 25ºC
200
180 VGS = 10V
9V
160
140
8V
120
100 7V
80
60
6V
40
20 5V
0
0 2 4 6 8 10 12 14 16 18 20
VD S - Volts
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Tem perature
3
VGS = 10V
2.6
2.2
1.8 ID = 74A
1.4 ID = 37A
1
0.6
-50 -25
0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
80
70
60
50
40
30
20
10
0
-50 -25
0 25 50 75 100 125 150 175
TC - Degrees Centigrade



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100
90
80
70
60
50
40
30
20
10
0
3.5
Fig. 7. Input Adm ittance
TJ = 150ºC
25ºC
-40ºC
4 4.5 5 5.5 6
VG S - Volts
6.5
7
200
180
160
140
120
100
80
60
40
20
0
0.4
Fig. 9. Source Current vs.
Source-To-Drain Voltage
TJ = 150ºC
TJ = 25ºC
0.6 0.8 1 1.2 1.4
VS D - Volts
10000
Fig. 11. Capacitance
f = 1MHz
Ciss
1000
Coss
C rs s
IXFH 74N20P IXFV 74N20P
IXFV 74N20PS
www.DataSheet4U.com
Fig. 8. Transconductance
60
50
40 TJ = -40ºC
25ºC
150ºC
30
20
10
0
0 20 40 60 80 100 120
I D - Amperes
Fig. 10. Gate Charge
10
9 VDS = 100V
8 ID = 37A
7 IG = 10mA
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80 90 100 110
Q G - nanoCoulombs
1000
Fig. 12. Forw ard-Bias
Safe Operating Area
RDS(on) Limit
TJ = 175ºC
TC = 25ºC
100
10 DC
25µs
100µs
1ms
10ms
100
0
5 10 15 20 25 30 35 40
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
1
10
100
VD S - Volts
1000



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