IS66WV51216DALL Datasheet PDF - Integrated Silicon Solution


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IS66WV51216DALL
Integrated Silicon Solution

Part Number IS66WV51216DALL
Description 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM
Page 17 Pages

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IS66WV51216DALL
IS66/67WV51216DBLL
8Mb LOW VOLTAGE,
ULTRA LOW POWER PSEUDO CMOS STATIC RAM
JULY 2011
FEATURES
• High-speed access time:
– 70ns (IS66WV51216DALL, IS66/67WV51216DBLL)
– 55ns (IS66/67WV51216DBLL)
• CMOS low power operation
• Single power supply
– Vdd = 1.7V-1.95V (IS66WV51216 ALL)
– Vdd = 2.5V-3.6V (IS66/67WV51216 BLL)
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ISSI IS66WV51216DALL and IS66/67WV51216DBLL
are high-speed, 8M bit static RAMs organized as 512K
words by 16 bits. It is fabricated using ISSI's high-
performance CMOS technology.This highly reliable process
coupled with innovative circuit design techniques, yields
high-performance and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is
(deselected) or when CS1 is , CS2 is
and both
LB and UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS66WV51216DALL and IS66/67WV51216DBLL are
packaged in the JEDEC standard 48-ball mini BGA (6mm
x 8mm) and 44-Pin TSOP (TYPE II). The device is aslo
available for die sales.
A0-A18
DECODER
512K x 16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CS2
CS1
OE CONTROL
WE CIRCUIT
UB
LB
Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written
assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
06/28/2011
1
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IS66WV51216DALL
IS66/67WV51216DBLL
PIN CONFIGURATIONS:
48-Ball mini BGA (6mm x 8mm)
1 23 45 6
A LB OE A0 A1 A2 CS2
B
I/O8
UB
A3
A4 CS1 I/O0
C I/O9
I/O10
A5
A6
I/O1
I/O2
D GND I/O11 A17 A7 I/O3 VDD`
E VDD I/O12 NC
A16 I/O4 GND
F I/O14 I/O13 A14
A15
I/O5
I/O6
G I/O15
NC
A12 A13 WE
I/O7
H
A18
A8 A9
A10 A11
NC
44-Pin TSOP (Type II)
A4
A3
A2
A1
A0
CS1
I/O0
I/O1
I/O2
I/O3
VDD
GND
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
PIN DESCRIPTIONS
A0-A18
I/O0-I/O15
CS1, CS2
OE
WE
LB
UB
NC
Vdd
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
44 A5
43 A6
42 A7
41 OE
40 UB
39 LB
38 I/O15
37 I/O14
36 I/O13
35 I/O12
34 GND
33 VDD
32 I/O11
31 I/O10
30 I/O9
29 I/O8
28 A18
27 A8
26 A9
25 A10
24 A11
23 A17
2 Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
06/28/2011



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IS66WV51216DALL
IS66/67WV51216DBLL
TRUTH TABLE
Mode
Not Selected
Output Disabled
Read
Write
WE CS1 CS2 OE LB UB
XHXXXX
XXLXXX
XXXXHH
HLHHL X
HLHHX L
HLHL LH
HLHLHL
HLHL L L
L LHXLH
L LHXHL
L LHXL L
I/O PIN
I/O0-I/O7 I/O8-I/O15
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
out
High-Z
High-Z
out
out
out
n
High-Z
High-Z
n
nn
Vdd Current
I 1, I 2
I 1, I 2
I 1, I 2
Icc
Icc
Icc
Icc
Note:
CS2 input signal pin is only available for 48-ball mini BGA package parts. CS2 input is internally enabled for 44-pin TSOP-II pack-
age parts.
OPERATING RANGE (Vdd)
Range
Industrial
Automotive, A1
Automotive, A2
Ambient Temperature
–40°C to +85°C
–40°C to +85°C
–40°C to +105°C
IS66WV51216DALL
(70ns)
1.7V - 1.95V
IS66WV51216DBLL
(55ns, 70ns)
2.5V - 3.6V
IS67WV51216DBLL
(55ns, 70ns)
2.5V - 3.6V
2.5V - 3.6V
P -U I
z
IS66WV512616DALL/DBLL and IS67WV512616DBLL include an on-chip voltage sensor used to launch the power-up initialization
process. When VDD reaches a stable level at or above the VDD (min) , the device will require 50μs to complete its self-initialization
process.During the initialization period, CS should remain HIGH.When initialization is complete, the device is ready for normal operation.
VDD (min)
0V
VDD
50us
Device Initialization
Device for Normal Operation
Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
06/28/2011
3



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IS66WV51216DALL
IS66/67WV51216DBLL
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
Vterm
Terminal Voltage with Respect to GND
–0.2 to Vdd+0.3
V
Temperature Under Bias
–40 to +85
°C
Vdd Vdd Related to GND
–0.2 to +3.8
V
tg Storage Temperature
–65 to +150
°C
Pt Power Dissipation
1.0 W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-
ing conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Vdd = 2.5V-3.6V
Symbol Parameter
Test Conditions
Vdd
Vo
Output HIGH Voltage
Io = -1 mA
2.5-3.6V
Vo
Output LOW Voltage
Io = 2.1 mA
2.5-3.6V
V Input HIGH Voltage(1)
2.5-3.6V
V Input LOW Voltage(1)
2.5-3.6V
I Input Leakage
GND V n Vdd
I o Output Leakage
GND Vout Vdd, Outputs Disabled
Notes:
1. V (min.) = –2.0V AC (pulse width < 10ns). Not 100% tested.
V (max.) = Vdd + 2.0V AC (pulse width < 10ns). Not 100% tested.
Min.
2.2
2.2
–0.2
–1
–1
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Vdd = 1.7V-1.95V
Symbol Parameter
Test Conditions
Vdd
Vo
Output HIGH Voltage
Io = -0.1 mA
1.7-1.95V
Vo
Output LOW Voltage
Io = 0.1 mA
1.7-1.95V
V Input HIGH Voltage(1)
1.7-1.95V
V Input LOW Voltage(1)
1.7-1.95V
I Input Leakage
GND V n Vdd
I o Output Leakage
GND Vout Vdd, Outputs Disabled
Notes:
1. V (min.) = –1.0V AC (pulse width < 10ns). Not 100% tested.
V (max.) = Vdd + 1.0V AC (pulse width < 10ns). Not 100% tested.
Min.
1.4
1.4
–0.2
–1
–1
Max.
0.4
Vdd + 0.3
0.6
1
1
Max.
0.2
Vdd + 0.2
0.4
1
1
Unit
V
V
V
V
A
A
Unit
V
V
V
V
A
A
4 Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
06/28/2011




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