IS61LV2568L Datasheet PDF - Integrated Silicon Solution


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IS61LV2568L
Integrated Silicon Solution

Part Number IS61LV2568L
Description 256K x 8 HIGH-SPEED CMOS STATIC RAM
Page 14 Pages

IS61LV2568L datasheet pdf
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IS61LV2568L
256K x 8 HIGH-SPEED CMOS STATIC RAM
ISSI®
JULY 2005
FEATURES
• High-speed access time: 8, 10 ns
• Operating Current: 50mA (typ.)
• Standby Current: 700µA (typ.)
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE
options
CE power-down
• TTL compatible inputs and outputs
• Single 3.3V power supply
• Packages available:
– 36-pin 400-mil SOJ
– 44-pin TSOP (Type II)
• Lead-free available
DESCRIPTION
The ISSI IS61LV2568L is a very high-speed, low power,
262,144-word by 8-bit CMOS static RAM. The IS61LV2568L
is fabricated using ISSI's high-performance CMOS tech-
nology. This highly reliable process coupled with innova-
tive circuit design techniques, yields higher performance
and low power consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 36mW (max.) with CMOS input levels.
The IS61LV2568L operates from a single 3.3V power
supply and all inputs are TTL-compatible.
The IS61LV2568L is available in 36-pin 400-mil SOJ and
44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A17
VDD
GND
I/O0-I/O7
DECODER
256K X 8
MEMORY ARRAY
I/O
DATA
CIRCUIT
COLUMN I/O
CE
CONTROL
OE CIRCUIT
WE
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this speci fication and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services desrcibed herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
07/25/05
1
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IS61LV2568L
PIN CONFIGURATION
36-Pin SOJ
A4
A3
A2
A1
A0
CE
I/O0
I/O1
VDD
GND
I/O2
I/O3
WE
A17
A16
A15
A14
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36 NC
35 A5
34 A6
33 A7
32 A8
31 OE
30 I/O7
29 I/O6
28 GND
27 VDD
26 I/O5
25 I/O4
24 A9
23 A10
22 A11
21 A12
20 NC
19 NC
PIN DESCRIPTIONS
A0-A17
CE
OE
WE
I/O0-I/O7
VDD
GND
NC
Address Inputs
Chip Enable Input
Output Enable Input
Write Enable Input
Bidirectional Ports
Power
Ground
No Connection
44-Pin TSOP (Type II)
NC
NC
A4
A3
A2
A1
A0
CE
I/O0
I/O1
VDD
GND
I/O2
I/O3
WE
A17
A16
A15
A14
A13
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
ISSI®
44 NC
43 NC
42 NC
41 A5
40 A6
39 A7
38 A8
37 OE
36 I/O7
35 I/O6
34 GND
33 VDD
32 I/O5
31 I/O4
30 A9
29 A10
28 A11
27 A12
26 NC
25 NC
24 NC
23 NC
2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
07/25/05



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IS61LV2568L
TRUTH TABLE
Mode
Not Selected
(Power-down)
Output Disabled
Read
Write
WE CE OE
XHX
HLH
HL L
L LX
I/O Operation
High-Z
High-Z
DOUT
DIN
ISSI ®
VDD Current
ISB1, ISB2
ICC
ICC
ICC
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VDD
VTERM
TSTG
PD
Parameter
Supply voltage with Respect to GND
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
Value
–0.5 to +4.0
–0.5 to VDD + 0.5
–65 to +150
1.0
Unit
V
V
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
VDD (8ns)
3.3V +10%,-5%
VDD (10 ns)
3.3V + 10%
3.3V + 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
VOH Output HIGH Voltage
VOL Output LOW Voltage
VIH Input HIGH Voltage(1)
VIL Input LOW Voltage(1)
ILI Input Leakage
ILO Output Leakage
Test Conditions
VDD = Min., IOH = –4.0 mA
VDD = Min., IOL = 8.0 mA
GND VIN VDD
GND VOUT VDD, Outputs Disabled
Note:
1. VIL(min) = –0.3V (DC); VIL(min) = –2.0V (pulse width - 2.0 ns).
VIH(max) = VDD + 0.3V (DC); VIH(max) = VDD + 2.0V (pulse width - 2.0 ns).
Min.
2.4
2.0
–0.3
–1
–1
Max.
0.4
VDD + 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
07/25/05
3



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IS61LV2568L
ISSI®
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol
ICC
Parameter
VDD Operating
Supply Current
Test Conditions
VDD = Max., CE = VIL
IOUT = 0 mA, f = Max.
Com.
Ind.
typ.(2)
-8 ns
Min. Max.
— 65
— 50
-10 ns
Min. Max.
— 60
— 65
— 50
ISB1 TTL Standby
Current
(TTL Inputs)
VDD = Max.,
VIN = VIH or VIL
CE VIH, f = max
ISB2 CMOS Standby VDD = Max.,
Current
CE VDD – 0.2V,
(CMOS Inputs) VIN VDD – 0.2V, or
VIN 0.2V, f = 0
Com.
Ind.
Com.
Ind.
typ.(2)
— 30
—3
— 700
— 25
— 30
—3
—4
— 700
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD=3.3V, TA=250C. Not 100% tested.
Unit
mA
mA
mA
mA
µA
CAPACITANCE(1,2)
Symbol
CIN
CI/O
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
07/25/05




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