IRLR2908PbF Datasheet PDF - International Rectifier


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IRLR2908PbF
International Rectifier

Part Number IRLR2908PbF
Description Power MOSFET
Page 12 Pages

IRLR2908PbF datasheet pdf
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PD - 95552A
AUTOMOTIVE MOSFET
IRLR2908PbF
IRLU2908PbF
Features
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
D
VDSS = 80V
RDS(on) = 28m
S ID = 30A
Description
Specifically designed for Automotive applications, this HEXFET ® Power MOSFET
utilizes the latest processing techniques to achieve extremely low on-resistance per silicon
area. Additional features of this HEXFET power MOSFET are a 175°C junction operating
temperature, low RθJC, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of other applications.\
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave
soldering techniques. The straight lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
D-Pak
IRLR2908
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
™Pulsed Drain Current
Maximum Power Dissipation
Max.
39
28
30
150
120
VGS
EAS
EAS (tested)
IAR
EAR
dv/dt
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
™Avalanche Current
hRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
0.77
± 16
180
250
See Fig.12a,12b,15,16
2.3
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
Thermal Resistance
300 (1.6mm from case )
Parameter
Typ.
Max.
RθJC
RθJA
RθJA
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Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
––– 1.3
––– 40
––– 110
I-Pak
IRLU2908
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
12/7/04
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IRLR/U2908PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
80 ––– –––
––– 0.085 –––
––– 22.5 28
––– 25 30
1.0 ––– 2.5
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
fmVGS = 10V, ID = 23A
fVGS = 4.5V, ID = 20A
V VDS = VGS, ID = 250µA
gfs Forward Transconductance
35 ––– ––– S VDS = 25V, ID = 23A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 80V, VGS = 0V
––– ––– 250
VDS = 80V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 16V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -16V
Qg Total Gate Charge
––– 22 33 nC ID = 23A
Qgs Gate-to-Source Charge
––– 6.0 9.1
VDS = 64V
Qgd
Gate-to-Drain ("Miller") Charge
––– 11 17
VGS = 4.5V
td(on)
Turn-On Delay Time
––– 12 ––– ns VDD = 40V
tr Rise Time
–––9 5– ––
ID = 23A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 36 –––
–––5 5– ––
fRG = 8.3
VGS = 4.5V
LD Internal Drain Inductance
––– 4.5 ––– nH Between lead,
D
LS Internal Source Inductance
––– 7.5 –––
6mm (0.25in.)
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 1890 –––
––– 260 –––
––– 35 –––
––– 1920 –––
––– 170 –––
––– 310 –––
and center of die contact
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 64V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 39
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 150
A showing the
integral reverse
G
––– ––– 1.3
fp-n junction diode.
S
V TJ = 25°C, IS = 23A, VGS = 0V
f––– 75 110 ns TJ = 25°C, IF = 23A, VDD = 25V
––– 210 310 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes  through ˆ are on page 11
HEXFET® is a registered trademark of International Rectifier.
2
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IRLR/U2908PbF
1000
100
10
TOP
BOTTOM
VGS
15V
10V
4.5V
4.0V
3.5V
3.0V
2.7V
2.5V
1
2.5V
0.1
0.01
0.01
20µs PULSE WIDTH
Tj = 25°C
0.1 1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
15V
10V
4.5V
4.0V
3.5V
3.0V
2.7V
2.5V
10
2.5V
1
0.1
0.01
20µs PULSE WIDTH
Tj = 175°C
0.1 1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10 TJ = 25°C
VDS = 25V
20µs PULSE WIDTH
1
2345
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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60
TJ = 25°C
50
40
30 TJ = 175°C
20
10
0
0
VDS = 10V
20µs PULSE WIDTH
10 20 30 40 50 60
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
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IRLR/U2908PbF
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
100
5.0
ID= 23A
4.0
3.0
VDS= 64V
VDS= 40V
VDS= 16V
2.0
1.0
0.0
0
5 10 15 20
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
25
1000.00
100.00
10.00
TJ = 175°C
1.00 TJ = 25°C
0.10
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
10msec
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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