IRLHM630TRPBF Datasheet PDF - International Rectifier

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IRLHM630TRPBF
International Rectifier

Part Number IRLHM630TRPBF
Description Power MOSFET
Page 9 Pages


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VDS
VGS max
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
Qg (typical)
ID
(@Tc(Bottom) = 25°C)
30 V
±12 V
3.5 mΩ
4.5 mΩ
41 nC
40h A
D5
D6
D7
D8
Applications
Battery Operated DC Motor Inverter MOSFET
Secondary Side Synchronous Rectification MOSFET
IRLHM630PbF
HEXFET® Power MOSFET
4G
3S
2S
1S
PQFN 3.3mm x 3.3mm
Features and Benefits
Features
Low RDSon (<3.5mΩ)
Low Thermal Resistance to PCB (<3.4°C/W)
Low Profile (<1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRLHM630TRPBF
IRLHM630TR2PBF
Package Type
PQFN 3.3mm x 3.3mm
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes  through … are on page 9
Max.
30
±12
21
17
40h
40h
160
2.7
37
0.022
-55 to + 150
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Units
V
A
W
W/°C
°C
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IRLHM630PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Δ ΒVDSS/Δ TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Δ VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
RG Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
30
–––
–––
–––
–––
0.5
–––
–––
–––
–––
–––
140
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
2.1
2.2
2.5
3.5
0.8
-3.8
–––
–––
–––
–––
–––
41
4.6
14
2.6
9.1
32
65
43
3170
330
250
Max. Units
Conditions
––– V VGS = 0V, ID = 250μA
––– mV/°C Reference to 25°C, ID = 1mA
e3.2 VGS = 10V, ID = 20A
e3.5 mΩ VGS = 4.5V, ID = 20A
e4.5 VGS = 2.5V, ID = 20A
1.1
–––
V
mV/°C
VDS
=
VGS,
ID =
50μA
1.0 μA VDS = 24V, VGS = 0V
150 VDS = 24V, VGS = 0V, TJ = 125°C
100 nA VGS = 12V
-100 VGS = -12V
––– S VDS = 10V, ID = 20A
62 VDS = 14V
––– nC VGS = 4.5V
––– ID = 20A (See Fig.17 & 18)
––– Ω
––– VDD = 15V, VGS = 4.5V
––– ns ID = 20A
––– RG=1.0Ω
––– See Fig.15
––– VGS = 0V
––– pF VDS = 25V
––– ƒ = 1.0MHz
Typ.
Max.
Units
––– 80 mJ
––– 20 A
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
20
30
Max. Units
Conditions
h40 MOSFET symbol
D
A showing the
G
160 integral reverse
S
p-n junction diode.
e1.2 V TJ = 25°C, IS = 20A, VGS = 0V
30 ns TJ = 25°C, IF = 20A, VDD = 10V
45 nC di/dt = 400A/μs
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
fParameter
Junction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
3.4
37
46
31
Units
°C/W
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IRLHM630PbF
1000
100
10
TOP
BOTTOM
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.6V
1.5V
1.3V
1000
100
TOP
BOTTOM
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.6V
1.5V
1.3V
1 1.3V
0.1
0.1
60μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
10 1.3V
1
0.1
60μs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
ID = 20A
1.6 VGS = 4.5V
100
TJ = 150°C
10 TJ = 25°C
1.4
1.2
1.0
1.0
1.0
VDS = 15V
60μs PULSE WIDTH
1.5 2.0 2.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
14
ID= 20A VDS= 24V
12 VDS= 15V
10 VDS= 6.0V
8
6
4
2
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0
0 20 40 60 80 100 120
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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IRLHM630PbF
1000
100
TJ = 150°C
10 TJ = 25°C
VGS = 0V
1.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
80
LIMITED BY PACKAGE
60
40
20
0
25
50 75 100 125
TC, Case Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Case (Bottom) Temperature
10
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10 100μsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
DC
10msec
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
1.4
1.2
1.0
0.8
0.6
ID = 50μA
0.4 ID = 250μA
ID = 1.0mA
0.2 ID = 10mA
0.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
D = 0.50
1 0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
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IRLHM630TRPBF datasheet pdf
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