IRLH5030TRPBF Datasheet PDF - International Rectifier

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IRLH5030TRPBF
International Rectifier

Part Number IRLH5030TRPBF
Description Power MOSFET
Page 8 Pages


IRLH5030TRPBF datasheet pdf
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VDS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
RG (typical)
ID
(@Tmb = 25°C)
100
9.9
44
1.2
88h
V
m
nC
A
Applications
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
IRLH5030PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Features
Low RDSon (9.0m)
Low Thermal Resistance to PCB (0.8°C/W)
100% Rg tested
Low Profile (0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
results in
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRLH5030PBF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable part number
IRLH5030TRPBF
Absolute Maximum Ratings
Parameter
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ Tmb = 25°C
ID @ Tmb = 100°C
IDM
PD @TA = 25°C
PD @ Tmb = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes  through † are on page 8
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Max.
±16
13
11
88h
56h
400
3.6
156
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
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IRLH5030PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/TJ
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Min.
100
–––
–––
–––
1.0
–––
–––
–––
–––
–––
160
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.10
7.2
7.9
–––
-5.9
–––
–––
–––
–––
–––
94
44
7.7
4.0
22
10.3
26
20
1.2
21
72
41
41
5185
300
150
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
e9.0
e9.9
m
VGS = 10V, ID = 50A
VGS = 4.5V, ID = 50A
2.5
–––
V
mV/°C
VDS
=
VGS,
ID
=
150µA
20
250
100
-100
–––
–––
66
µA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
nA
VGS = 16V
VGS = -16V
S VDS = 50V, ID = 50A
nC VGS = 10V, VDS = 50V, ID = 50A
––– VDS = 50V
–––
–––
nC
VGS = 4.5V
ID = 50A
––– See Fig.17 & 18
–––
––– nC VDS = 16V, VGS = 0V
–––
––– VDD = 50V, VGS = 4.5V
–––
–––
ns
ID = 50A
RG=1.8
––– See Fig.15
––– VGS = 0V
––– pF VDS = 50V
––– ƒ = 1.0MHz
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
230
50
Units
mJ
A
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Thermal Resistance
Min. Typ. Max. Units
Conditions
––– ––– 100
––– ––– 400
––– ––– 1.0
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 50A, VGS = 0V
––– 32 48 ns TJ = 25°C, IF = 50A, VDD = 50V
––– 190 285 nC di/dt = 500A/µs
Time is dominated by parasitic Inductance
Parameter
Typ.
Max.
Units
RθJC-mb
RθJC (Top)
RθJA
RθJA (<10s)
Junction-to-Mounting Base
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
0.5 0.8
––– 15 °C/W
––– 35
––– 33
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IRLH5030PbF
1000
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
100
2.7V
10
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
TJ = 150°C
100
10 TJ = 25°C
1000
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
100
2.7V
10
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.5
ID = 50A
VGS = 10V
2.0
1.5
1
VDS = 25V
60µs PULSE WIDTH
0.1
1 2 3 4 5 6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Ciss
14.0
ID= 50A
12.0
VDS= 80V
10.0
VDS= 50V
VDS= 20V
8.0
1000
Coss
Crss
6.0
4.0
2.0
100
1
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.0
0
40 80 120
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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IRLH5030PbF
1000
100
10
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
100
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10 1msec
10msec
1
0.1 Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1 1
DC
10 100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
2.5
80
2.0
60
1.5
40
ID = 150µA
ID = 500µA
20
1.0
ID = 1.0mA
ID = 1.0A
0
25 50 75 100 125
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
10
150
0.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Mounting Base
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