IRL2505PBF Datasheet PDF - International Rectifier

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IRL2505PBF
International Rectifier

Part Number IRL2505PBF
Description HEXFET Power MOSFET
Page 8 Pages


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l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-220 is universally preferred for all commercial-
Industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current 
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Juction-to-Ambient
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G
PD -95622
IRL2505PbF
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 0.008
ID = 104A…
S
TO-220AB
Max.
104…
74
360
200
1.3
± 16
500
54
20
5.0
55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
8/3/04



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IRL2505PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.035 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.008
VGS = 10V, ID = 54A „
RDS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.010 VGS = 5.0V, ID = 54A „
––– ––– 0.013
VGS = 4.0V, ID = 45A „
VGS(th)
Gate Threshold Voltage
1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance
59 ––– ––– S VDS = 25V, ID = 54A
IDSS
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250
µA VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
––– 100
––– -100
nA
VGS = 16V
VGS = -16V
Qg Total Gate Charge
––– ––– 130
ID = 54A
Qgs Gate-to-Source Charge
––– ––– 25 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge
––– ––– 67
VGS = 5.0V, See Fig. 6 and 13 „
td(on)
Turn-On Delay Time
––– 12 –––
VDD = 28V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 160 –––
––– 43 –––
ns ID = 54A
RG = 1.3Ω, VGS = 5.0V
tf Fall Time
––– 84 –––
RD = 0.50Ω, See Fig. 10 „
LS Internal Source Inductance
––– 7.5 –––
Between lead,
nH and center of die contact
Ciss Input Capacitance
––– 5000 –––
VGS = 0V
Coss Output Capacitance
––– 1100 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 390 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
––– ––– 104…
A
––– ––– 360
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 1.3 V TJ = 25°C, IS = 54A, VGS = 0V „
––– 140 210 ns TJ = 25°C, IF = 54A
––– 650 970 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 240µH
RG = 25, IAS = 54A. (See Figure 12)
ƒ ISD 54A, di/dt 230A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
… Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
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1000
100
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
2.5V
IRL2505PbF
1000
100
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
2.5V
10
2.5V
20µs PULSE WIDTH
1
TJ = 25°C
A
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2.5V
10
20µs PULSE WIDTH
1
TJ = 175°C
A
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = 25°C
100 TJ = 175°C
10
V DS= 25V
1
20µs PULSE WIDTH
A
2.5 3.5 4.5 5.5 6.5 7.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.5 ID = 90A
2.0
1.5
1.0
0.5
0.0 VGS = 5V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3



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IRL2505PbF
10000
8000
6000
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
Ciss
4000
Coss
2000
Crss
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
15 I D = 54A
12
VDS = 44V
VDS = 28V
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0A
0 40 80 120 160 200
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175°C
TJ = 25°C
10
0.4
VGS = 0V A
0.8 1.2 1.6 2.0 2.4 2.8
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10µs
100µs
1ms
10
10ms
TTCJ
= 25°C
= 175°C
Single Pulse
1
1 10
VDS , Drain-to-Source Voltage (V)
A
100
Fig 8. Maximum Safe Operating Area
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International Rectifier
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