IRKF132 Datasheet PDF - International Rectifier

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IRKF132
International Rectifier

Part Number IRKF132
Description FAST THYRISTOR/ DIODE and THYRISTOR
Page 8 Pages


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Bulletin I27092 rev. A 09/97
FAST THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
IRK.F132.. SERIES
INT-A-pakä Power Modules
Features
Fast turn-off thyristor
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 VRMS isolating voltage
Industrial standard package
UL E78996 approved
Description
These series of INT-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are required.
130 A
Major Ratings and Characteristics
Parameters
IRK.F132..
Units
I T(AV)
IT(RMS)
I TSM
I2t
@ TC
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
I2t
130
90
293
3210
3360
51.5
47.0
515
A
°C
A
A
A
KA2s
KA2s
KA2s
tq
trr
VDRM / V RRM
TJ range
15
2
up to 800
- 40 to 125
µs
µs
V
oC
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IRK.F132.. Series
Bulletin I27092 rev. A 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
IRK.F132..
Voltage
Code
04
08
VRRM/VDRM, maximum repetitive
peak reverse voltage
V
400
800
VRSM , maximum non-
repetitive peak rev. voltage
V
400
800
IRRM/IDRM max.
@ TJ = 125°C
mA
30
Current Carrying Capacity
Frequency f
180oel
ITM
180oel
ITM
100µs
ITM
Units
50Hz
400Hz
2500Hz
5000Hz
10000Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Case temperature
Equivalent values for RC circuit
250 420
320 530
240 390
210 340
160 275
50 50
80%VDRM
50 50
90 60
47 / 0.22 µF
408 640
485 800
400 650
340 530
300 415
50 50
80%VDRM
--
90 60
47/ 0.22 µF
2465
3460
1470
2150
540 830
340 530
--
50 50
80%VDRM
--
90 60
47 / 0.22 µF
A
A
A
A
A
V
V
A/µ s
°C
On-state Conduction
Parameter
IT(AV) Maximum average on-state current
@ Case temperature
IT(RMS) Maximum RMS current
I Maximum peak, one-cycle,
TSM
non-repetitive surge current
I2t Maximum I2t for fusing
I2t Maximum I2t for fusing
VT(TO)1 Low level value of threshold voltage
VT(TO)2 High level value of threshold voltage
rt1 Low level value of on-state slope resistance
rt2 High level value of on-state slope resistance
VTM Maximum on-state voltage drop
IH Maximum holding current
IL Typical latching current
2
IRK.F132..
130
90
293
3210
3360
2700
2825
51.5
47.0
36.5
33.3
515
1.16
1.25
0.92
0.77
1.71
600
1000
Units Conditions
A 180° conduction, half sine wave
°C
A TC = 90°C, as AC switch
A t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% V
RRM
t = 8.3ms reapplied Sinusoidal half wave,
KA2s t = 10ms No voltage Initial TJ = 125°C
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
KA2s t = 0 to 10ms, no voltage reapplied
V (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mW (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
V Ipk = 600A, TJ = TJ max., tp = 10ms sine pulse
mA TJ = 25°C, IT > 30 A
mA TJ = 25°C, VA = 12V, Ra = 6, Ig = 1A
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Switching
Parameter
di/dt Maximum non-repetitive rate of rise
trr Maximum recovery time
tq Maximum turn-off time
IRK.F132.. Series
Bulletin I27092 rev. A 09/97
IRK.F132..
800
2
L
15
Units Conditions
A/µs
µs
µs
Gate drive 20V, 20, tr 1ms, VD= 80% VDRM
TJ = 25°C
ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C
ITM = 350A, TJ = 125°C, di/dt = -25A/µs,
V = 50V, dv/dt = 400V/µs linear to 80% V
R DRM
Blocking
Parameter
dv/dt
VINS
IRRM
I
DRM
Maximum critical rate of rise of off-state
voltage
RMS isolation voltage
Maximum peak reverse and off-state
leakage current
IRK.F132..
1000
3000
30
Units Conditions
V/µs T = 125°C., exponential to = 67% V
J DRM
V 50 Hz, circuit to base, TJ = 25°C, t = 1 s
mA TJ = 125°C, rated VDRM/VRRM applied
Triggering
Parameter
PGM
PG(AV)
IGM
-V
GM
IGT
V
GT
IGD
V GD
Maximum peak gate power
Maximum peak average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Max. DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
IRK.F132..
60
10
10
5
200
3
20
0.25
Units Conditions
W f = 50 Hz, d% = 50
W TJ = 125°C, f = 50Hz, d% = 50
A TJ = 125°C, tp < 5ms
V
mA TJ = 25°C, Vak 12V, Ra = 6
V
mA TJ = 125°C, rated VDRM applied
V
Thermal and Mechanical Specifications
Parameter
IRK.F132..
TJ Max. junction operating temperature range
Tstg Max. storage temperature range
RthJC Max. thermal resistance, junction to
case
RthC-hs Max. thermal resistance, case to
heatsink
T Mounting torque ± 10% IAP to heatsink
- 40 to 125
- 40 to 150
0.17
0.035
4 - 6 (35 - 53)
busbar to IAP 4 - 6 (35 - 53)
wt Approximate weight
500 (17.8)
Units Conditions
°C
K/W Per junction, DC operation
K/W Mounting surface flat and greased
Per module
Nm
(lb*in)
g (oz)
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
lubricated with a compound
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IRK.F132.. Series
Bulletin I27092 rev. A 09/97
RthJC Conduction
(The following table shows the increment of thermal resistance R when devices operate at different conduction angles than DC)
thJC
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180°
120°
90°
60°
30°
0.016
0.019
0.024
0.035
0.060
0.011
0.020
0.026
0.037
0.060
K/W T = 125°C
J
Ordering Information Table
Device Code
IRK T F 13 2
- 08 H L N
1 2 34 5
67 88
1 - Module type
2 - Circuit configuration
3 - Fast SCR
4 - Current rating: IT(AV) x 10 rounded
5 - 1 = option with spacers and longer terminal screws
2 = option with standard terminal screws
6 - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
7 - dv/dt code: H 400V/µs
8 - tq code: L 15µs
9 - None = Standard devices
N = Aluminum nitrade substrate
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRKF132 FAST THYRISTOR/ DIODE and THYRISTOR IRKF132
International Rectifier
IRKF132 pdf

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