IRHSLNA58Z60 Datasheet PDF - International Rectifier


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IRHSLNA58Z60
International Rectifier

Part Number IRHSLNA58Z60
Description RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT
Page 9 Pages

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PD-94400B
RAD-HARD
SYNCHRONOUS RECTIFIER
SURFACE MOUNT (SMD-2)
IRHSLNA57Z60
30V, N-CHANNEL
Product Summary
Part Number Radiation Level RDS(on) QG
IRHSLNA57Z60 100K Rads (Si) 4.0m200nC
IRHSLNA53Z60 300K Rads (Si) 4.0m200nC
IRHSLNA54Z60 600K Rads (Si) 4.0m200nC
IRHSLNA58Z60 1000K Rads (Si) 4.5m200nC
SMD-2
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. RAD-Hard MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of Military and
Space applications.
Features:
n Co-Pack N-channel RAD-Hard MOSFET
and Schottky Diode
n Ideal for Synchronous Rectifiers in DC-DC
Converters up to 75A Output
n Low Conduction Losses
n Low Switching Losses
n Low Vf Schottky Rectifier
n Refer to IRHSNA57Z60 for Lower Rds(on)
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain or Source Current
Continuous Drain or Source Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
IF (AV)@ TC = 25°C
IF (AV)@ TC =100°C
TJ, TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Schottky and Body Diode Avg. Forward Current
Schottky and Body Diode Avg. Forward Current
Opeating and Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
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Pre-Irradiation
Units
75*
75* A
300
250 W
2.0 W/°C
±20 V
500 mJ
75 A
25 mJ
75*
75* A
-55 to 150
300 (for 5s)
3.3 (Typical)
°C
g
1
03/30/04
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IRHSLNA57Z60
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
RDS(on)
VGS(th)
gfs
IDSS
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Min Typ Max Units
30 — — V
— — 4.0 m
Test Conditions
VGS = 0V, ID = 1.0mA
VGS = 12V, ID = 45A‚
2.0 — 4.0
V
45 — — S ( )
— — 50 µA
— — 50 mA
— — 100
— — -100 nA
— — 200
— — 55 nC
— — 40
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 45A‚
VDS = 24V, VGS=0V
VDS = 24V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 45A,
VDS = 15V
— — 35
— — 160 ns
— — 78
VDD = 15V, ID = 45A,
VGS =12V, RG = 2.35
— — 26
— 6.6 — nH Measured from center of drain
pad to center of source pad
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
VSD Diode Forward Voltage
trr Reverse Recovery Time
QRR Reverse Recovery Charge
LS + LD Total Inductance
— 1.15
— 1.05
V
TJ = -55°C, ID=45A, VGS = 0V‚
TJ = 25°C, ID= 45A, VGS = 0V‚
— — 0.95
TJ = 110°C, ID=45A, VGS = 0V‚
— — 175 nS Tj = 25°C, IF =45A, di/dt 100A/µs
— — 500 nC VDS 30V
— 7.95 — nH Measured from center of drain pad to
center of source pad (for Schottky only)
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD
Thermal Resistance
Parameter
RthJC
RthJC
Junction-to-Case (MOSFET)
Junction-to-Case (Schottky)
Min Typ Max Units
— — 0.5
— — 0.7 °C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
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Radiation Characteristics
IRHSLNA57Z60
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test condi-
tions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅⑦
Parameter
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Min Max Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 30
VGS(th) Gate Threshold Voltage
2.0 4.0
IGSS
Gate-to-Source Leakage Forward
— 100
IGSS
Gate-to-Source Leakage Reverse
— -100
IDSS
Zero Gate Voltage Drain Current
RDS(on) Static Drain-to-Source
— 10
— 4.0
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source
— 4.0
On-State Resistance (SMD-2)
VSD Diode Forward Voltage
— 1.3
30 —
V
1.5 4.0
— 100 nA
— -100
— 25 µA
— 5.0 m
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS= 24V, VGS =0V
VGS = 12V, ID =45A
— 4.5 m
VGS = 12V, ID =45A
— 1.3 V
VGS = 0V, IS = 45A
1. Part numbers IRHSLNA57Z60, IRHSLNA53Z60 and IRHSLNA54Z60
2. Part number IRHSLNA58Z60
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
MeV/(mg/cm2))
Br 37.9
I 59.4
Au 80.3
Energy
(MeV)
255
290
313
Range
(µm) @VGS=0V @VGS=-5V
33.4 30
30
28.8 25
25
26.5 22.5
22.5
VDS (V)
@VGS=-10V
30
20
15
@VGS=-15V
25
15
10
@VGS=-20V
20
10
35
30
25
20
15
10
5
0
0
Br
I
AU
-5 -10 -15 -20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHSLNA57Z60
Pre-Irradiation
10000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
1000
5.0V
BOTTOM 4.5V
100
10
4.5V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
4.5V
20µs PULSE WIDTH
TJ = 150 °C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100 TJ = 150° C
TJ = 25°C
10
V DS= 15V
20µs PULSE WIDTH
1
4.0 5.0 6.0 7.0 8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
2.0 ID = 75A
1.5
1.0
0.5
VGS = 12V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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