IRHLA770Z4 Datasheet PDF - International Rectifier


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IRHLA770Z4
International Rectifier

Part Number IRHLA770Z4
Description RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE
Page 9 Pages

IRHLA770Z4 datasheet pdf
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PD-97305
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (14-LEAD FLAT PACK)
Product Summary
Part Number Radiation Level
IRHLA770Z4 100K Rads (Si)
IRHLA730Z4 300K Rads (Si)
RDS(on)
0.60
0.60
ID
0.8A
0.8A
2N7620M2
IRHLA770Z4
60V, Quad N-CHANNEL
TECHNOLOGY
™
14-Lead Flat Pack
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
n Complimentary P-Channel Available -
IRHLA7970Z4
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
0.8
0.5
3.2
0.6
0.005
±10
16
0.8
0.06
10.2
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.63 in./1.6 mm from case for 10s)
0.52 (Typical)
g
For footnotes refer to the last page
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IRHLA770Z4, 2N7620M2
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @Tj = 25°C (Unless Otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
VGS(th)/TJ Gate Threshold Voltage Coefficient
gfs Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
60
1.0
0.23
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Typ Max Units
——
V
0.067 — V/°C
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
— 0.60
VGS = 4.5V, ID = 0.5A Ã
— 2.0 V
-4.7 — mV/°C
VDS = VGS, ID = 250µA
——
— 1.0
— 10
S
µA
— 100
— -100 nA
— 2.8
VDS = 10V, IDS = 0.5A Ã
VDS= 48V ,VGS= 0V
VDS = 48V,
VGS = 0V, TJ =125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 0.8A
— 0.6 nC
— 1.6
VDS = 30V
— 6.5
— 2.5 ns
— 35
VDD = 30V, ID = 0.8A,
VGS = 5.0V, RG = 24
— 13
20 —
Measured from Drain lead (6mm /0.25in
nH from pack.) to Source lead (6mm/0.25in
141 —
38 —
1.4 —
from pack.)with Source wire internally
bonded from Source pin to Drain pad
VGS = 0V, VDS = 25V
pF f = 1.0MHz
8.0 —
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) À
0.8
3.2
A
VSD Diode Forward Voltage
— — 1.2 V
trr Reverse Recovery Time
— — 55 ns
QRR Reverse Recovery Charge
— — 63 nC
Tj = 25°C, IS = 0.8A, VGS = 0V Ã
Tj = 25°C, IF = 0.8A, di/dt 100A/µs
VDD 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
— — 210 °C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available International Rectifier Website.
For footnotes refer to the last page
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PRraed-IirartaiodniaCtiohnaracteristics
IRHLA770Z4, 2N7620M2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each N-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-39)
Static Drain-to-Source On-state „
Resistance (14-Lead Flat Pack)
Up to 300K Rads (Si)1
Min Max
60 —
1.0 2.0
— 100
— -100
— 1.0
— 0.60
— 0.60
Units
V
nA
µA
Test Conditions
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = 10V
VGS = -10V
VDS= 48V, VGS= 0V
VGS = 4.5V, ID = 0.5A
VGS = 4.5V, ID = 0.5A
VSD Diode Forward Voltage „
— 1.2 V
VGS = 0V, ID = 0.8A
1. Part numbers IRHLA770Z4, IRHLA730Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion LET Energy Range
VDS (V)
(MeV/(mg/cm2)) (MeV)
(µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V -2V -4V -5V -6V -7V -8V -10V
Br 37
I 60
Au 84
305 39 60 60 60 60 60 35 30 20
370 34 60 60 60 60 60 20 15 -
390 30 60 60 60 60
-
-
-
-
70
60
50
40
30
20
10
0
0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
VGS
Br
I
Au
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHLA770Z4, 2N7620M2
Pre-Irradiation
10
VGS
TOP
10V
5.0V
4.5V
3.5V
3.0V
1 2.5V
2.25V
BOTTOM 2.0V
0.1
0.01
0.1
60µs PULSE WIDTH -T j = 25°C
2.0V
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.5V
2.25V
2.0V
1
2.0V
0.1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
10
TJ = 150°C
1
TJ = 25°C
0.1
0.01
2
VDS = 25V
6s PUL1S5E WIDTH
2.5 3 3.5
VGS, Gate-to-Source Voltage (V)
4
Fig 3. Typical Transfer Characteristics
4
2.0
ID = 0.8A
1.5
1.0
0.5
VGS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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