| Part Number | IRG4PC50F |
| Manufacturer | IRF |
| Title | INSULATED GATE BIPOLAR TRANSISTOR |
| Description | PD 91468C IRG4PC50F INSULATED GATE BIPOLAR TRANSISTOR Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz ... |
| Features |
• Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.4... |
| Published | Aug 2, 2005 |
| Datasheet |
 IRG4PC50F File
|
| Part Number | IRG4PC50WPBF |
| Manufacturer | International Rectifier |
| Title | INSULATED GATE BIPOLAR TRANSISTOR |
| Description | PD - 94858 IRG4PC50WPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC (power factor corre. |
| Features |
Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction off. |
| Datasheet |
IRG4PC50WPBF File
|
| Part Number | IRG4PC50W |
| Manufacturer | IRF |
| Title | INSULATED GATE BIPOLAR TRANSISTOR |
| Description | PD - 91657B IRG4PC50W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correcti. |
| Features |
• Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction off. |
| Datasheet |
IRG4PC50W File
|
| Part Number | IRG4PC50UPBF |
| Manufacturer | International Rectifier |
| Title | INSULATED GATE BIPOLAR TRANSISTOR |
| Description | PD -95186 INSULATED GATE BIPOLAR TRANSISTOR IRG4PC50UPbF UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-. |
| Features |
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C G E n-channel Benefits • Generat. |
| Datasheet |
IRG4PC50UPBF File
|
| Part Number | IRG4PC50UDPBF |
| Manufacturer | International Rectifier |
| Title | INSULATED GATE BIPOLAR TRANSISTOR |
| Description | PD -95185 IRG4PC50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating f. |
| Features |
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes. |
| Datasheet |
IRG4PC50UDPBF File
|
| Part Number | IRG4PC50UD |
| Manufacturer | IRF |
| Title | INSULATED GATE BIPOLAR TRANSISTOR |
| Description | PD 91471B IRG4PC50UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating freq. |
| Features |
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes. |
| Datasheet |
IRG4PC50UD File
|
