IRFH8325PbF Datasheet PDF - International Rectifier


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IRFH8325PbF
International Rectifier

Part Number IRFH8325PbF
Description HEXFET Power MOSFET
Page 9 Pages

IRFH8325PbF datasheet pdf
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VDS
Vgs max
RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
Qg typ
ID
(@Tc(Bottom) = 25°C)
30
± 20
5.0
7.2
15
25i
V
V
mΩ
nC
A
Applications
Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Low Thermal Resistance to PCB (< 2.3°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
IRFH8325PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Enable better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH8325TRPbF
IRFH8325TR2PbF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Continuous Drain Current, VGS @ 10V (Source Bonding
Technology Limited)
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes  through ‡ are on page 9
Max.
30
± 20
21
17
82hi
52hi
25i
100
3.6
54
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
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IRFH8325PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)
IDSS
IGSS
gfs
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
74
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.021
4.1
6.0
1.8
-6.0
–––
–––
–––
–––
–––
32
15
4.4
1.5
4.2
4.9
5.7
11
1.1
12
16
14
7.1
2487
503
204
–––
–––
5.0
7.2
2.35
–––
1
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V VGS = 0V, ID = 250μA
V/°C
mΩ
Reference to 25°C, ID = 1.0mA
eVGS = 10V, ID = 20A
eVGS = 4.5V, ID = 16A
V
mV/°C
VDS
= VGS,
ID
=
50μA
μA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 10V, ID = 20A
nC VGS = 10V, VDS = 15V, ID = 20A
VDS = 15V
nC
VGS = 4.5V
ID = 20A
nC VDS = 16V, VGS = 0V
Ω
VDD = 15V, VGS = 4.5V
ns
ID = 20A
RG=1.8Ω
VGS = 0V
pF VDS = 10V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
94
20
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
i––– ––– 25
––– –––
––– –––
––– 16
––– 25
100
1.0
24
38
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 20A, VGS = 0V
ns TJ = 25°C, IF = 20A, VDD = 15V
nC di/dt = 380A/μs
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
Parameter
fJunction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
2.3
34
35
22
Units
°C/W
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IRFH8325PbF
1000
100
10
TOP
BOTTOM
VGS
10V
7.00V
5.00V
4.50V
3.50V
3.00V
2.75V
2.50V
1000
100
TOP
BOTTOM
VGS
10V
7.00V
5.00V
4.50V
3.50V
3.00V
2.75V
2.50V
1 2.5V
0.1
0.1
60μs PULSE WIDTH
Tj = 25°C
1 10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
TJ = 150°C
10 2.5V
1
0.1
60μs PULSE WIDTH
Tj = 150°C
1 10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
ID = 20A
1.6 VGS = 10V
1.4
10 1.2
TJ = 25°C
1
VDS = 15V
60μs PULSE WIDTH
0.1
1234567
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
100
Ciss
Coss
Crss
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
14
ID= 20A
12
VDS= 24V
10 VDS= 15V
VDS= 6V
8
6
4
2
10
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0
0 10 20 30 40 50
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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IRFH8325PbF
1000
100 TJ = 150°C
TJ = 25°C
10
VGS = 0V
1.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
100
iLimited By Source
Bonding Technology
75
50
25
0
25 50 75 100 125
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case (Bottom) Temperature
10
150
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
100
100μsec
10
Limited by
iSource Bonding
Technology
DC 1msec
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.10 1
10
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
2.4
2.2
2.0
1.8
1.6
1.4 ID = 50μA
1.2
ID = 250μA
ID = 1.0mA
1.0 ID = 1.0A
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
1 D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
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