IRFH7107PBF Datasheet PDF - International Rectifier

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IRFH7107PBF
International Rectifier

Part Number IRFH7107PBF
Description HEXFET Power MOSFET
Page 9 Pages


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VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
75 V
8.5 m
48 nC
0.6
75 A
Applications
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Features and Benefits
Features
Low RDSon (< 8.5m)
Low Thermal Resistance to PCB (< 1.2°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
IRFH7107PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Lower Conduction Losses
Enables better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFH7107TRPBF
IRFH7107TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice #259
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Notes  through … are on page 9
Max.
75
± 20
14
11
75
47
300
3.6
104
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
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IRFH7107PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Min.
75
–––
–––
2.0
–––
–––
–––
–––
–––
68
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.09
6.9
–––
-8.7
–––
–––
–––
–––
–––
48
10
4.0
15
19
19
19
0.6
9.1
12
20
6.5
3110
365
165
Max. Units
Conditions
––– V VGS = 0V, ID = 250uA
e––– V/°C Reference to 25°C, ID = 1.0mA
8.5 mVGS = 10V, ID = 45A
4.0
–––
V
mV/°C
VDS
=
VGS,
ID
=
100µA
20
250
100
-100
–––
72
µA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 25V, ID = 45A
––– VDS = 38V
–––
–––
nC
VGS = 10V
ID = 45A
–––
–––
––– nC VDS = 16V, VGS = 0V
–––
––– VDD = 38V, VGS = 10V
–––
–––
ns
ID = 45A
RG=1.8
–––
––– VGS = 0V
––– pF VDS = 25V
––– ƒ = 1.0MHz
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
106
45
Units
mJ
A
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 75
––– ––– 300
––– ––– 1.3
––– 28 42
––– 160 240
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 45A, VGS = 0V
ns TJ = 25°C, IF = 45A, VDD = 38V
nC di/dt = 500A/µs
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
f Parameter
Junction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
1.2
30
35
22
Units
°C/W
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1000
100
10
TOP
BOTTOM
VGS
15V
10V
7.0V
5.5V
4.8V
4.5V
4.3V
4.0V
1000
100
IRFH7107PbF
TOP
BOTTOM
VGS
15V
10V
7.0V
5.5V
4.8V
4.5V
4.3V
4.0V
1
0.1 4.0V
0.01
0.1
1
60µs PULSE WIDTH
Tj = 25°C
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
TJ = 150°C
10
TJ = 25°C
VDS = 25V
60µs PULSE WIDTH
1.0
2345678
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
Ciss
Coss
Crss
10
4.0V
1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.2
2.0
ID = 45A
VGS = 10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
14.0
ID= 45A
12.0
VDS= 60V
10.0
VDS= 38V
VDS= 15V
8.0
6.0
4.0
2.0
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0.0
0
10 20 30 40 50 60
QG, Total Gate Charge (nC)
70
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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1000
100
TJ = 150°C
TJ = 25°C
10
VGS = 0V
1.0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
80
70
60
50
40
30
20
10
0
25 50 75 100 125
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case (Bottom) Temperature
10
150
IRFH7107PbF
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
10msec
10
DC
Tc = 25°C
Tj = 150°C
Single Pulse
1
01
10
100 1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
4.5
4.0
3.5
3.0
2.5
ID = 100µA
ID = 250µA
ID = 1.0mA
2.0 ID = 1.0A
1.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
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