IRFH5306PBF Datasheet PDF - International Rectifier

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IRFH5306PBF
International Rectifier

Part Number IRFH5306PBF
Description HEXFET Power MOSFET
Page 8 Pages


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VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
30
8.1
7.8
1.4
44
Applications
Control MOSFET for buck converters
V
m
nC
A
IRFH5306PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Features and Benefits
Fe a ture s
Low charge (typical 7.8nC)
Low thermal resistance to PCB (< 4.9°C/W)
100% Rg tested
Low profile (< 0.9 mm)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Industrial qualification
results in
Be ne fi ts
Lower switching losses
Increased power density
Increased reliability
Increased power density
Multi-vendor compatibility
Easier manufacturing
Environmentally friendly
Increased reliability
Orderable part number
Package Type
IRFH5306TRPBF
IRFH5306TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice #259
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Max.
30
±20
15
13
44
28
60
3.6
26
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through … are on page 8
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IRFH5306PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.02
6.9
11
1.8
-6.4
–––
–––
–––
–––
–––
7.8
1.8
1.1
3.0
1.9
4.1
4.9
1.4
9.0
26
9.1
6.1
1125
230
102
–––
–––
8.1
13.3
2.35
–––
5.0
150
100
-100
–––
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V VGS = 0V, ID = 250µA
V/°C
m
Reference to 25°C, ID = 1mA
eVGS = 10V, ID = 15A
eVGS = 4.5V, ID = 15A
V
mV/°C
VDS =
VGS, ID
=
25µA
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 15A
VDS = 15V
nC VGS = 4.5V
ID = 15A
See Fig.17 & 18
nC VDS = 16V, VGS = 0V
VDD = 15V, VGS = 4.5V
ns ID = 15A
RG=1.8
See Fig.15
VGS = 0V
pF VDS = 15V
ƒ = 1.0MHz
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
46
15
Units
mJ
A
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 44
––– –––
––– –––
––– 17
––– 18
60
1.0
26
27
MOSFET symbol
A showing the
integral reverse
G
p-n junction diode.
eV TJ = 25°C, IS = 15A, VGS = 0V
ns TJ = 25°C, IF = 15A, VDD = 15V
nC di/dt = 200A/µs
Time is dominated by parasitic Inductance
D
S
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
Parameter
fJunction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
4.9
24
35
22
Units
°C/W
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100
10
1 2.7V
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
IRFH5306PbF
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
2.7V
0.1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
ID = 15A
1.6 VGS = 10V
TJ = 150°C
10
TJ = 25°C
1.4
1.2
1.0
1.0
1
VDS = 15V
60µs PULSE WIDTH
2345
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
14.0
ID= 15A
12.0
VDS= 24V
10.0 VDS= 15V
8.0
6.0
4.0
2.0
10
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.0
0 2 4 6 8 10 12 14 16 18 20
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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100
10 TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
45
40
35
30
25
20
15
10
5
0
25 50 75 100 125
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case (Bottom) Temperature
10
150
D = 0.50
1 0.20
0.10
0.05
0.1 0.02
0.01
IRFH5306PbF
100
10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100µsec
10msec
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
1
01
10 100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
ID = 25µA
1.0
ID = 500µA
ID = 1.0mA
ID = 1.0A
0.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
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