IRFB4212PbF Datasheet PDF - International Rectifier


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IRFB4212PbF
International Rectifier

Part Number IRFB4212PbF
Description Digital Audiio MOSFET
Page 7 Pages

IRFB4212PbF datasheet pdf
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DIGITAL AUDIO MOSFET
PD - 96918A
IRFB4212PbF
Features
Key parameters optimized for Class-D audio
amplifier applications
Low RDSON for improved efficiency
Low QG and QSW for better THD and improved
efficiency
Low QRR for better THD and lower EMI
175°C operating junction temperature for
ruggedness
Can deliver up to 150W per channel into 4load in
half-bridge topology
Key Parameters
VDS
RDS(ON) typ. @ 10V
Qg typ.
Qsw typ.
RG(int) typ.
TJ max
100
72.5
15
8.3
2.2
175
D
G
V
m:
nC
nC
°C
S TO-220AB
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Power Dissipation f
Power Dissipation f
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
100
±20
18
13
57
60
30
0.4
-55 to + 175
300
10lbxin (1.1Nxm)
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case f
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient f
Notes  through … are on page 2
www.irf.com
Typ.
–––
0.50
–––
Max.
2.5
–––
62
Units
°C/W
1
9/16/05



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IRFB4212PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
RG(int)
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
LD
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
100 ––– –––
V VGS = 0V, ID = 250µA
––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA
e––– 58 72.5 mVGS = 10V, ID = 13A
3.0 ––– 5.0
V VDS = VGS, ID = 250µA
––– -13 ––– mV/°C
––– ––– 20
µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 100V, VGS = 0V, TJ = 125°C
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
11 ––– –––
S VDS = 50V, ID = 13A
––– 15 23
––– 3.3 –––
VDS = 80V
––– 1.4 ––– nC VGS = 10V
––– 6.9 –––
ID = 13A
––– 3.4 –––
See Fig. 6 and 19
––– 8.3 –––
––– 2.2 –––
––– 7.7 –––
––– 28 –––
––– 14 –––
––– 3.9 –––
ÃeVDD = 50V, VGS = 10V
ID = 13A
ns RG = 2.5
––– 550 –––
––– 66 –––
––– 35 –––
VGS = 0V
pF VDS = 50V
ƒ = 1.0MHz,
See Fig.5
––– 350 –––
––– 4.5 –––
VGS = 0V, VDS = 0V to 80V
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
and center of die contact
S
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÃgIAR Avalanche Current
gEAR Repetitive Avalanche Energy
Typ.
–––
Max.
25
See Fig. 14, 15, 17a, 17b
Units
mJ
A
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS @ TC = 25°C Continuous Source Current
––– ––– 18
MOSFET symbol
(Body Diode)
A showing the
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– ––– 57
––– ––– 1.3
––– 41 62
––– 69 100
integral reverse
p-n junction diode.
eV TJ = 25°C, IS = 13A, VGS = 0V
ns TJ = 25°C, IF = 13A
enC di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.32mH, RG = 25, IAS = 13A.
ƒ Pulse width 400µs; duty cycle 2%.
2
„ Rθ is measured at TJ of approximately 90°C.
… Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
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100
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
10
6.0V
IRFB4212PbF
100
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
10
6.0V
1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100.0
10.0 TJ = 175°C
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
3.0
ID = 13A
VGS = 10V
2.5
2.0
1.0 TJ = 25°C
0.1
2
VDS = 50V
60µs PULSE WIDTH
468
VGS, Gate-to-Source Voltage (V)
10
Fig 3. Typical Transfer Characteristics
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
20
ID= 13A
16
12
VDS= 80V
VDS= 50V
VDS= 20V
8
4
10
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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0
0 5 10 15 20 25
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3



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IRFB4212PbF
100.0
10.0
TJ = 175°C
1.0 TJ = 25°C
VGS = 0V
0.1
0.0 0.5 1.0 1.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
20
16
12
8
4
0
25
50 75 100 125 150
TJ , Junction Temperature (°C)
175
Fig 9. Maximum Drain Current vs. Case Temperature
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
1 10msec
Tc = 25°C
Tj = 175°C
Single Pulse DC
0.1
1 10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5.0
4.0
ID = 250µA
3.0
2.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
1 D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01 SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
τ3 τ3
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
R4R4
τCτ
Ri (°C/W)
0.0489
0.3856
τi (sec)
0.00000
0.000062
τ4τ4 1.3513 0.001117
0.7140 0.013125
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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