IRF840B Datasheet PDF - Vishay


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IRF840B
Vishay

Part Number IRF840B
Description D Series Power MOSFET
Page 8 Pages

IRF840B datasheet pdf
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IRF840B
Vishay Siliconix
D Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. at 25 °C ()
Qg (max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
550
VGS = 10 V
30
4
7
Single
0.85
TO-220AB
S
D
G
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
FEATURES
• Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
- Fast Switching
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
* Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
APPLICATIONS
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargers
TO-220AB
IRF840BPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dtd
TJ = 125 °C
Soldering Recommendations (Peak Temperature)c
for 10 s
ID
IDM
EAS
PD
TJ, Tstg
dV/dt
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 5 A.
c. 1.6 mm from case.
d. ISD ID, starting TJ = 25 °C.
LIMIT
500
± 30
30
8.7
5.5
18
1.25
29
156
- 55 to + 150
24
0.37
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S12-1375-Rev. A, 18-Jun-12
1
Document Number: 91521
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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IRF840B
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
RthJA
RthJC
TYP.
-
-
MAX.
62
0.8
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductancea
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 250 μA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 4 A
VDS = 20 V, ID = 4 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Relatedb
Effective Output Capacitance, Time
Relatedc
Ciss
Coss
Crss
Co(er)
Co(tr)
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
VDS = 0 V to 400 V, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 10 V
ID = 4 A, VDS = 400 V
VDD = 400 V, ID = 4 A
Rg = 9.1 , VGS = 10 V
f = 1 MHz, open drain
MIN. TYP.
500 -
- 0.58
3-
--
--
--
- 0.70
-3
- 527
- 52
-8
- 46
- 64
- 15
-4
-7
- 13
- 16
- 17
- 11
- 1.8
Continuous Source-Drain Diode Current IS MOSFET symbol
showing the
Pulsed Diode Forward Current
integral reverse
ISM p - n junction diode
D
G
S
--
--
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
VSD
trr
Qrr
IRRM
TJ = 25 °C, IS = 4 A, VGS = 0 V
TJ = 25 °C, IF = IS = 4 A,
dI/dt = 100 A/μs, VR = 20 V
--
- 308
- 1.8
- 11
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
c. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
MAX. UNIT
-
-
5
± 100
1
10
0.85
-
V
V/°C
V
nA
μA
S
-
-
-
pF
-
-
30
- nC
-
26
32
ns
34
22
-
8
A
32
1.2 V
- ns
- μC
-A
S12-1375-Rev. A, 18-Jun-12
2
Document Number: 91521
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF840B
Vishay Siliconix
20
TOP 15 V
14 V
TJ = 25 °C
13 V
16 12 V
11 V
10 V
9.0 V
12 8.0 V
7.0 V
6.0 V
8
4
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
3
2.5 ID = 4 A
2
1.5
1
VGS = 10 V
0.5
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
15
TOP 15 V
14 V
13 V
12 12 V
11 V
10 V
9.0 V
9 8.0 V
7.0 V
6.0 V
5.0 V
6
TJ = 150 °C
3
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
1000
100
Coss
Ciss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
10 Crss
1
0 100 200 300 400 500
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
16
12
8
TJ = 150 °C
4
TJ = 25 °C
0
0 5 10 15 20 25
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
24
VDS = 400 V
20
VDS = 250 V
VDS = 100 V
16
12
8
4
0
0 5 10 15 20 25
Qg, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S12-1375-Rev. A, 18-Jun-12
3
Document Number: 91521
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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IRF840B
Vishay Siliconix
100
TJ = 150 °C
10 TJ = 25 °C
1
VGS = 0 V
0.1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
VSD, Source-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
Operation in this area limited by RDS(on)
10
100 μs
1
Limited by RDS(on)*
1 ms
0.1
0.01
TC = 25 °C
TJ = 150 °C
Single Pulse
10 ms
BVDSS Limited
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Fig. 8 - Maximum Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
10
8
6
4
2
0
25 50 75 100 125 150
TJ, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
625
600
575
550
525
500
475
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (˚C)
Fig. 10 - Typical Drain-to-Source Voltage vs. Temperature
0.01
0.0001
0.001
0.01
Pulse Time (s)
0.1
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
1
S12-1375-Rev. A, 18-Jun-12
4
Document Number: 91521
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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