IRF830 Datasheet PDF - BLUE ROCKET ELECTRONICS

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IRF830
BLUE ROCKET ELECTRONICS

Part Number IRF830
Description N-CHANNEL MOSFET
Page 6 Pages


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IRF830
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package.
特征 / Features
低栅电荷,低反馈电容,开关速度快。
Low gate charge, low crss, fast switching.
用途 / Applications
用于高效 DC/DC 转换和功率开关。
These devices are well suited for high efficiency switching DC/DC converters and switch mode power
supplies.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
12 3
PIN1G
PIN 2D
PIN 3S
放大及印章代码 / hFE Classifications & Marking
见印章说明。 See Marking Instructions.
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IRF830
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Drain-Source Voltage
Drain Current
Pulsed Drain Current
Gate-Source Voltage
Avalanche Current
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Total Power Dissipation
Junction and Storage Temperature Range
符号
Symbol
VDSS
ID(Tc=25)
ID(Tc=100)
IDM
VGSS
IAR
EAS
EAR
PD(Tc=25)
TJ,TSTG
数值
Rating
500
5.0
3.0
20
±30
5
292
8.75
87.5
-55 to 150
单位
Unit
V
A
A
A
V
A
mJ
mJ
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Forward On Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
符号
Symbol
BVDSS
IDSS
测试条件
Test Conditions
VGS=0V
ID=250μA
VDS=500V VGS=0V
VDS=400V TC=125
IGSS VGS=±30V VDS=0V
VGS(th) VDS=VGS
ID=250μA
RDS(on) VGS=10V
ID=2.5A
gFS
VSD
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=40V
VGS=0V
ID=2.5A
IS=5.0A
VDS=25V
f=1.0MHz
VGS=0V
VDD=250V ID=5.0A
RG=25
最小值 典型值 最大值 单位
Min Typ Max Unit
500 V
10 μA
100 μA
±0.1 μA
2.0 4.0 V
1.15 1.4
4.2 S
1.5 V
680 900
85 110 pF
15 20
20 50
40 90
ns
90 190
45 100
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IRF830
Rev.E Mar.-2016
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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IRF830
Rev.E Mar.-2016
外形尺寸图 / Package Dimensions
DATA SHEET
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