IRF7324 Datasheet PDF - International Rectifier


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IRF7324
International Rectifier

Part Number IRF7324
Description Power MOSFET
Page 8 Pages

IRF7324 datasheet pdf
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PD -93799A
q Trench Technology
q Ultra Low On-Resistance
q Dual P-Channel MOSFET
q Low Profile (<1.1mm)
q Available in Tape & Reel
q 2.5V Rated
S1
G1
S2
G2
Description
New trench HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in battery and load management
applications.
IRF7324
HEXFET® Power MOSFET
1
2
8 D1
7 D1
VDSS = -20V
3 6 D2
4 5 D 2 RDS(on) = 0.018
To p V iew
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
VGS
TJ , TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-9.0
-7.1
-71
2.0
1.3
16
± 12
-55 to + 150
Units
V
A
W
W
mW/°C
V
°C
Thermal Resistance
Parameter
Max.
RθJA
Maximum Junction-to-Ambient ƒ
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Units
62.5
°C/W
1
6/26/00
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IRF7324
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-20 ––– ––– V VGS = 0V, ID = -250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– -0.02 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.018
––– ––– 0.026
VGS = -4.5V, ID = -9.0A ‚
VGS = -2.5V, ID = -7.7A ‚
VGS(th)
Gate Threshold Voltage
-0.45 ––– -1.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance
19 ––– ––– S VDS = -10V, ID = -9.0A
IDSS Drain-to-Source Leakage Current
––– ––– -1.0
––– ––– -25
µA
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -12V
––– ––– 100
VGS = 12V
Qg Total Gate Charge
––– 42 63
ID = -9.0A
Qgs Gate-to-Source Charge
––– 7.1 11 nC VDS = -16V
Qgd Gate-to-Drain ("Miller") Charge
––– 12 18
VGS = -5.0V
td(on)
Turn-On Delay Time
––– 17 –––
VDD = -10V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 36 ––– ns ID = -1.0A
––– 170 –––
RG = 6.0
––– 190 –––
RD = 10‚
Ciss Input Capacitance
––– 2940 –––
VGS = 0V
Coss
Output Capacitance
––– 630 ––– pF VDS = -15V
Crss Reverse Transfer Capacitance
––– 420 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
––– ––– -2.0
––– ––– -71
MOSFET symbol
showing the
A integral reverse
p-n junction diode.
G
D
S
––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V ‚
––– 180 270 ns TJ = 25°C, IF = -2.0A
––– 300 450 nC di/dt = -100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 300µs; duty cycle 2%.
ƒ Surface mounted on FR-4 board, t 10sec.
2
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IRF7324
1000
100
VGS
TOP -4.5V
-3.5V
-2.5V
-2.0V
-1.5V
-1.3V
-1.0V
BOTTOM -0.75V
10
1
0.1
0.01
0.1
-0.75V
20µs PULSE WIDTH
TJ = 25 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP
-4.5V
-3.5V
-2.5V
-2.0V
-1.5V
-1.3V
-1.0V
BOTTOM -0.75V
10
1
-0.75V
0.1
0.01
0.1
20µs PULSE WIDTH
TJ = 150 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 150° C
10
TJ = 25 ° C
1
0.1
0.5
V DS= -15V
20µs PULSE WIDTH
1.0 1.5 2.0 2.5 3.0
-VGS, Gate-to-Source Voltage (V)
3.5
Fig 3. Typical Transfer Characteristics
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2.0 ID = -9.0A
1.5
1.0
0.5
VGS = -4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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IRF7324
5000
4000
3000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
2000
1000
0
1
Coss
Crss
10
-VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
ID = -9.0A
8
VDS = -16V
6
4
2
0
0 10 20 30 40 50 60
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150° C
10
TJ = 25° C
1
0.1
0.2
VGS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4
-VSD ,Source-to-Drain Voltage (V)
1.6
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10us
100us
10
1ms
TC = 25 °C
TJ = 150 ° C
Single Pulse
1
0.1
1
10ms
10
-VDS , Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area
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