IRF730A Datasheet PDF - nELL

www.Datasheet-PDF.com

IRF730A
nELL

Part Number IRF730A
Description N-Channel Power MOSFET
Page 7 Pages


IRF730A datasheet pdf
Download PDF
IRF730A pdf
View PDF for Mobile

No Preview Available !

SEMICONDUCTOR
IRF730 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(5.5A, 400Volts)
DESCRIPTION
The Nell IRF730 are N-Channel enhancement mode silicon
gate power field effect transistors. They are designed, tested
and guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation.
They are designed as an extremely efficient and reliable
device for use in a wide variety of applications such as
switching regulators. convertors,UPS, switching mode power
supplies and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These transistors can be operated directly from integrated
circuits.
FEATURES
RDS(ON) = 1.00Ω @ VGS = 10V
Ultra low gate charge(22nC Max.)
Low reverse transfer capacitance
(CRSS = 4pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-220AB
(IRF730A)
D (Drain)
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
5.5
400
1.00 @ VGS = 10V
22
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
VDGR
Drain to Source voltage(Note 1)
Drain to Gate voltage
TJ=25°C to 150°C
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
VGS=10V, TC=25°C
VGS=10V, TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
EAS Single pulse avalanche energy(Note 2)
lAR=5.5A, RGS=50Ω, VGS=10V
lAS=5.5A, L=19mH
dv/dt
Peak diode recovery dv/dt(Note 3)
Total power dissipation
PD
Derating factor above 25°C
TC=25°C
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.VDD ≤ 50V, L=19mH, lAS=5.5A, RG =25Ω, starting TJ =25°C
3.ISD ≤ 5.5A, di/dt ≤ 90A/µs, VDD V(BR)DSS, TJ ≤ 150°C.
www.nellsemi.com
Page 1 of 7
VALUE
400
400
±30
5.5
3.5
22
5.5
7.4
290
4.6
75
0.6
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
mJ
V /ns
W
W /°C
ºC
lbf.in (N.m)



No Preview Available !

SEMICONDUCTOR
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(c-s)
Thermal resistance, case to heatsink
Rth(j-a)
Thermal resistance, junction to ambient
IRF730 Series RRooHHSS
Nell High Power Products
Min.
Typ.
0.50
Max.
1.7
62
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
V(BR)DSS
Drain to source breakdown voltage
ID = 250µA ,VGS = 0V
▲ ▲V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 1mA, referenced to 25 °C
IDSS
Drain to source leakage current
VDS=400V, VGS=0V
VDS=320V, VGS=0V
TC = 25°C
TJ=125°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
RDS(ON)
Static drain to source on-state resistance VGS = 10V, ID = 3.3A (Note 1),
VGS(TH)
Gate threshold voltage
VGS=VDS, ID=250μA
gfs Forward transconductance
VDS=50V, ID=3.3A,
CISS
Input capacitance
COSS
Output capacitance
VDS = 25V, VGS = 0V, f =1MHz
CRSS
Reverse transfer capacitance
td(ON)
Turn-on delay time
tr
td(OFF)
Rise time
Turn-off delay time
VDD = 200V, lD = 5.5A, RD = 57Ω,
VGS = 10V, RG =12Ω (Note 1)
tf Fall time
LD Internal drain inductance
LS internal source inductance
Between lead, 6mm from
package and center of die
QG Total gate charge
QGS
Gate to source charge
VDS = 320V, VGS = 10V, ID = 5.5A
QGD
Gate to drain charge (Miller charge)
Min.
400
2.0
3.1
Typ.
0.5
0.8
4.5
600
103
4
10
22
20
16
4.5
7.5
Max. UNIT
V
V/ºC
25
μA
250
100
-100
nA
4.5 V
S
pF
ns
nH
22
5.8 nC
9.3
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD Diode forward voltage
ISD = 5.5A, VGS = 0V
1.6 V
Is (IsD)
Continuous source to drain current
ISM Pulsed source current
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
G
(Gate)
5.5
A
22
trr Reverse recovery time
Qrr Reverse recovery charge
tON Forward turn-on time
S (Source)
IS = 5.5A, VGS = 0V,
dIF/dt = 100A/µs
370 550
1.6 2.4
ns
μC
Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
www.nellsemi.com
Page 2 of 7



No Preview Available !

SEMICONDUCTOR
ORDERING INFORMATION SCHEME
IRF730 Series RRooHHSS
Nell High Power Products
IRF 730 A
MOSFET series
N-Channel, IR series
Current & Voltage rating, lD & VDS
5.5A / 400V
Package type
A = TO-220AB
Fig.1 Typical output characteristics
100
10
VGS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
1
0.1
4.5V
20µs pulse width
0.01
TJ=25°C
0.1 1 10 100
Drain-to-Source voltage, VDS (V)
Fig.2 Typical output characteristics
100
10
VGS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
1
4.5V
0.1
20µs pulse width
0.01
TJ=150°C
0.1 1
10 100
Drain-to-Source voltage, VDS (V)
Fig.3 Typical transfer characteristics
103
102
TJ = 150°C
101 TJ = 25°C
1
46
VDS=50V
20µs pulse width
8 10 12
Gate-to-Source voltage, VGS (V)
Fig.4 Normalized On-Resistance vs. Temperature
2.5
lD =5.5A
2.0
1.5
1.0
0.5
VGS=10V
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature,TJ (°C)
www.nellsemi.com
Page 3 of 7



No Preview Available !

SEMICONDUCTOR
IRF730 Series RRooHHSS
Nell High Power Products
Fig.5 Typical capacitance vs. Drain-to-Source
voltage
100000
10000
VGS = 0V, f =1MHZ
Ciss = Cgs +Cgd (Cds = shorted )
Crss = Cgd
Coss = Cds +Cgd
1000
100
Ciss
Coss
10
Crss
1
1 10 100 1000
Drain-to-Source voltage, VDS (V)
Fig.6 Typical gate charge vs. Gate-to-Source
voltage
16
lD = 5.5A
14
VDS = 320V
VDS = 200V
12 VDS = 80V
8
4
For test circuit see
figure 13
0
0 5 10 15 20 25
Total gate charge, QG (nC)
Fig.7 Typical Source-Drain diode forward
voltage
100
10 TJ = 15 0°C
TJ = 25 °C
1
0.1
0.4 0.6 0.8
VGS = 0V
1 1.2
Source-to-Drain voltage, VSD (V)
Fig.8 Maximum safe operating area
100
10
Operation in This Area is Limited by RDS(ON)
10µs
100µs
1
Note:
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
0.1
10
100
1ms
10ms
1000
Drain-to-Source voltage, VDS (V)
Fig.9 Maximum drain current vs.
Case temperature
6
5
4
3
2
1
0
25 50 75 100 125 150
Case temperature, TC (°C)
www.nellsemi.com
Page 4 of 7



IRF730A datasheet pdf
Download PDF
IRF730A pdf
View PDF for Mobile


Related : Start with IRF730 Part Numbers by
IRF730 PowerMOS transistor Avalanche energy rated IRF730
NXP
IRF730 pdf
IRF730 N - CHANNEL 400V - 0.75 ohm - 5.5A - TO-220 PowerMESH] MOSFET IRF730
STMicroelectronics
IRF730 pdf
IRF730 5.5A/ 400V/ 1.000 Ohm/ N-Channel Power MOSFET IRF730
Intersil Corporation
IRF730 pdf
IRF730 N-Channel Power MOSFETs/ 5.5A/ 350 V/400V IRF730
Fairchild Semiconductor
IRF730 pdf
IRF730 Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-220AB IRF730
New Jersey Semiconductor
IRF730 pdf
IRF730 Power MOSFET IRF730
Vishay
IRF730 pdf
IRF730 N-CHANNEL MOSFET IRF730
BLUE ROCKET ELECTRONICS
IRF730 pdf
IRF730 N-Channel Power MOSFET IRF730
nELL
IRF730 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact